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IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Minimum Operating Temperature | Maximum Operating Temperature | Series | Number of Channels | Length | Height | Configuration | Technology | Transistor Polarity | Channel Mode | Rise Time | Fall Time | Transistor Type | Package | Installation style | Factory packaging quantity | unit weight | Vds-drain source breakdown voltage | Id-continuous drain current | Rds On-drain source on-resistance | Pd-power dissipation | Typical shutdown delay time | Typical on-delay time | Widt | |
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24,907
In-stock
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onsemi | MOSFET N-Ch LL UltraFET PWM Optimized | 20 V | - 55 C | + 175 C | ISL9N310 | 1 Channel | 10.29 mm | 7.88 mm | Single | Si | N-Channel | Enhancement | 52 ns | 36 ns | 1 N-Channel | Tube | Through Hole | 50 | 2.387 g | 30 V | 62 A | 15 mOhms | 70 W | 39 ns | 11 ns | 4.83 mm |