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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Number of Channels Length Width Height Pd - Power Dissipation Configuration Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Channel Mode Fall Time
2SK2998
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8,755
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Toshiba Semiconductor MOSFET MOSFET Small Signal 30 V Through Hole TO-92-3 - 55 C + 150 C 1 Channel 5.1 mm 4.1 mm 8.2 mm 900 mW Single Si N-Channel 500 V 500 mA 18 Ohms Enhancement 11 ns
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