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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Length Width Height Pd - Power Dissipation Configuration Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Channel Mode Rise Time Fall Time Typical Turn-Off Delay Time Typical Turn-On Delay Time Product Category
2SK3131
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23,511
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Toshiba Semiconductor MOSFET 3PL PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-... 30 V Through Hole TO-3PL-3 - 55 C + 150 C Reel 1 Channel 20 mm 5 mm 26 mm 250 W Single Si N-Channel 500 V 50 A 110 mOhms Enhancement 105 ns 65 ns 51 ns 20 ns MOSFET
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