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Vgs - Gate-Source Voltage :
Package / Case :
Minimum Operating Temperature :
Maximum Operating Temperature :
Packaging :
Pd - Power Dissipation :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Typical Turn-Off Delay Time :
Typical Turn-On Delay Time :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Series Packaging Number of Channels Length Width Height Pd - Power Dissipation Configuration Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Channel Mode Rise Time Fall Time Transistor Type Typical Turn-Off Delay Time Typical Turn-On Delay Time Subcategory unit weight Factory Pack Quantity RoHS Id - Continuous Drain Curren trademark Id-continuous drain current Rds On-drain source on-resistance Pd-power dissipation Typical shutdown delay time Typical on-delay time Widt
2SK2842
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RFQ
6,551
In-stock
Toshiba Semiconductor MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB... 30 V SMD/SMT SC-62-3 - 55 C + 150 C   Reel 1 Channel 4.6 mm 2.5 mm 1.6 mm 40 W Single Si N-Channel 500 V 12 A 520 mOhms   Enhancement 22 ns 36 ns 1 N-Channel         50                  
2SK941
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RFQ
23,351
In-stock
Toshiba Semiconductor MOSFET               1 Channel         Single Si N-Channel               1 N-Channel               Toshiba            
2SK2920
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RFQ
7,335
In-stock
Toshiba Semiconductor MOSFET MOLD PLN,ACTIVE,DISCON(05-04)/PHASE-OUT(...     PW-Mold-3         1 Channel 6.5 mm 5.5 mm 2.3 mm   Single Si N-Channel               1 N-Channel     MOSFETs                      
ISL9N310AS3
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RFQ
24,907
In-stock
onsemi MOSFET N-Ch LL UltraFET PWM Optimized 20 V     - 55 C + 175 C ISL9N310   1 Channel 10.29 mm   7.88 mm   Single Si N-Channel         Enhancement 52 ns 36 ns 1 N-Channel       2.387 g         62 A 15 mOhms 70 W 39 ns 11 ns 4.83 mm
HUF76143S3
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RFQ
50,000
In-stock
onsemi MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch 16 V Through Hole   - 40 C + 150 C   Tube 1 Channel 6.8 mm 2.5 mm 6.3 mm 225 W Single Si N-Channel 30 V   5.5 mOhms   Enhancement 145 ns, 55 ns 18 ns 1 N-Channel 30 ns, 40 ns 22 ns, 14 ns   0.084199 oz 50 N 75 A              
SSM3K35FS(T5L,F,T)
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RFQ
40,000
In-stock
Toshiba Semiconductor MOSFET 4 V SMD/SMT     + 150 C     1 Channel 1.6 mm 0.8 mm 0.7 mm 100 mW Single Si N-Channel 20 V 180 mA 3 Ohms 400 mV Enhancement     1 N-Channel 300 ns 115 ns                        
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