- Vf - Forward Voltage :
- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Series :
- Number of Channels :
- Pd - Power Dissipation :
- Configuration :
- Technology :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Rise Time :
- Transistor Type :
- Package :
- Typical Turn-Off Delay Time :
- Typical Turn-On Delay Time :
- Subcategory :
- Installation style :
- unit weight :
- Rds On-drain source on-resistance :
- Typical shutdown delay time :
- Typical on-delay time :
- range of working temperature :
14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Vf - Forward Voltage | Vgs - Gate-Source Voltage | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Series | Operating Supply Voltage | Memory Size | Number of Channels | Supply Voltage - Max | Supply Voltage - Min | Tolerance | If - Forward Current | Length | Width | Height | Pd - Power Dissipation | Configuration | Ir - Reverse Current | Capacitance | Ifsm - Forward Surge Current | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Interface Type | Input Type | Organization | Access Time | Output Type | Output Current per Channel | Ib - Input Bias Current | Vcm - Common Mode Voltage | CMRR - Common Mode Rejection Ratio | Voltage Gain dB | Amplifier Type | en - Input Voltage Noise Density | Isolation Voltage | Maximum Collector Emitter Voltage | Maximum Collector Current | Maximum Collector Emitter Saturation Voltage | Current Transfer Ratio | Rise Time | Fall Time | Impedance | Test Frequency | Transistor Type | Voltage Rating DC | Product Type | Maximum DC Current | Maximum DC Resistance | Dielectric | Package | Types of | Typical Turn-Off Delay Time | Typical Turn-On Delay Time | Subcategory | Product Category | Power supply voltage - maximum | Power supply voltage - minimum | Installation style | Factory packaging quantity | unit weight | GBP-gain bandwidth product | SR - Conversion rate | Vos - Input Bias Voltage | Working power supply current | Power type | Dual supply voltage | Maximum dual supply voltage | Minimum dual supply voltage | Vds-drain source breakdown voltage | Id-continuous drain current | Rds On-drain source on-resistance | Pd-power dissipation | Typical shutdown delay time | Typical on-delay time | Widt | Capacitor-nF | Capacitance -pF | range of working temperature | Vrrm - Repeated reverse voltage | |
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GET PRICE |
11,150
In-stock
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onsemi | MOSFET 30V Dual SyncFET | 16 V, 20 V | SO-8 | - 55 C | + 150 C | 2 Channel | 4.9 mm | 3.9 mm | 1.75 mm | 2 W | Dual | Si | N-Channel | 30 V | 6.5 A | 29 mOhms | Enhancement | 4.5 ns, 5 ns | 2.5 ns, 11 ns | 2 N-Channel | 20 ns, 25 ns | 7 ns, 8 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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4,500
In-stock
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Cypress Semiconductor | EPROM | Windowed CDIP | - 55 C | + 125 C | 5 V | 64 kbit | 5.5 V | 4.5 V | 32.51 mm | 7.87 mm | 3.56 mm | Parallel | 8 k x 8 | 55 ns | Memory & Data Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GET PRICE |
6,551
In-stock
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Toshiba Semiconductor | MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB... | 30 V | SC-62-3 | - 55 C | + 150 C | 1 Channel | 4.6 mm | 2.5 mm | 1.6 mm | 40 W | Single | Si | N-Channel | 500 V | 12 A | 520 mOhms | Enhancement | 22 ns | 36 ns | 1 N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GET PRICE |
24,500
In-stock
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Toshiba Semiconductor | Transistor Output Optocouplers AC input 80V 3750Vrms | 1.3 V | SOP-4 | - 55 C | + 100 C | TLP180 | 1 Channel | 50 mA | 3.6 mm | 4.4 mm | 2.5 mm | 200 mW | 1 Channel | NPN Phototransistor | 3750 Vrms | 80 V | 50 mA | 0.2 V | 600 % | Transistor Output Optocouplers | Transistor Output Optocouplers | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GET PRICE |
8,755
In-stock
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Toshiba Semiconductor | MOSFET | MOSFET Small Signal | 30 V | TO-92-3 | - 55 C | + 150 C | 1 Channel | 5.1 mm | 4.1 mm | 8.2 mm | 900 mW | Single | Si | N-Channel | 500 V | 500 mA | 18 Ohms | Enhancement | 11 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GET PRICE |
23,511
In-stock
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Toshiba Semiconductor | MOSFET 3PL PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-... | 30 V | TO-3PL-3 | - 55 C | + 150 C | 1 Channel | 20 mm | 5 mm | 26 mm | 250 W | Single | Si | N-Channel | 500 V | 50 A | 110 mOhms | Enhancement | 105 ns | 65 ns | 51 ns | 20 ns | MOSFET | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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24,907
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onsemi | MOSFET N-Ch LL UltraFET PWM Optimized | 20 V | - 55 C | + 175 C | ISL9N310 | 1 Channel | 10.29 mm | 7.88 mm | Single | Si | N-Channel | Enhancement | 52 ns | 36 ns | 1 N-Channel | Tube | Through Hole | 50 | 2.387 g | 30 V | 62 A | 15 mOhms | 70 W | 39 ns | 11 ns | 4.83 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GET PRICE |
15,600
In-stock
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Vishay Semiconductors | Schottky Diodes & Rectifiers 12 Amp 100 Volt Common Cathode | Schottky Rectifiers | 0.95 V | - 55 C | + 150 C | 12 A | 6.73 mm | 6.22 mm | 2.39 mm | Dual Common Cathode | 1000 uA | 330 A | Si | Schottky Diodes & Rectifiers | Schottky Diode | Schottky diodes and rectifiers | SMD/SMT | 2000 | 300 mg | - 55 C to + 150 C | 100 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GET PRICE |
45,000
In-stock
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Toshiba Semiconductor | MOSFET | 12 V | TSSOP-Advance-8 | - 55 C | + 150 C | 2 Channel | 3.65 mm | 3.5 mm | 0.75 mm | 1.1 W | Dual | Si | N-Channel | 20 V | 6 A | 17 mOhms | Enhancement | 5 ns | 10 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GET PRICE |
450,800
In-stock
|
Murata Electronics | Ferrite bead | 0201 (0603 metric) | - 55 C | + 125 C | 25 % | 0.6 mm | 0.3 mm | 0.3 mm | 47 Ohms | 100 MHz | 200 mA | 700 mOhms | Ferrite bead | 0.170 mg | - 55 C to + 125 C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
GET PRICE |
45,060
In-stock
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Panasonics | Film Capacitor 0.01uF 16VDC 5% PPS FILM 0805 | Stacked Film Capacitors | 0805 (2012 metric) | - 55 C | + 125 C | 5 % | 2 mm | 1.25 mm | 1.1 mm | 0.01 uF | 16 VDC | Film Capacitors | Polyphenylene Sulfide (PPS) | Cut Tape | Stacked Metallized Film Chip Capacitor | Film capacitor | 3000 | 5.500 mg | 10 nF | 10000 pF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
GET PRICE |
22,500
In-stock
|
onsemi | MOSFET N-Channel PowerTrench | 16 V | - 55 C | + 150 C | 2 Channel | 8.6 mm | 3.9 mm | 1.45 mm | Dual | Si | N-Channel | Enhancement | 13 ns | Reel | SMD/SMT | 2500 | 338 mg | 30 V | 14 A | 7 mOhms | 2.4 W | 28 ns, 51 ns | 11 ns, 14 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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350
In-stock
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Texas instruments | Operational Amplifiers - Op Amps DUAL OP AMP | - 55 C | + 125 C | 2 Channel | 9.6 mm | 6.67 mm | 4.57 mm | Bipolar | Rail-to-Rail | 30 mA | 150 nA | Negative Rail to Positive Rail - 1.5 V | 70 dB to 80 dB | 100 dB | High Gain Amplifier | 40 nV/sqrt Hz | Tube | 32 V | 3 V | Through Hole | 1 | 700 kHz | 0.3 V/us | 5 mV | 350 uA | Single, Dual | +/- 3 V, +/- 5 V, +/- 9 V | +/- 16 V | +/- 1.5 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
GET PRICE |
45,000
In-stock
|
NXP Semiconductors | Power Factor Correction - PFC Medium Power SSL Driver | - 55 C | + 150 C | MouseReel | PMIC - Power Management ICs | Power Factor Correction - PFC | SMD/SMT | 2500 | 666 mg |