semiconductors-Integrated Circuits - ICs - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Length	Width	Height	Pd - Power Dissipation	Configuration	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Channel Mode	Rise Time	Fall Time	Transistor Type	Package	Typical Turn-Off Delay Time	Typical Turn-On Delay Time	Subcategory	Product Category	Factory packaging quantity	unit weight	Vds-drain source breakdown voltage	Id-continuous drain current	Rds On-drain source on-resistance	Pd-power dissipation	Typical shutdown delay time	Typical on-delay time
	FDS6986S		GET PRICE	PDF RFQ	11,150 In-stock	onsemi	MOSFET 30V Dual SyncFET	16 V, 20 V	SMD/SMT	SO-8	- 55 C	+ 150 C	Cut Tape	2 Channel	4.9 mm	3.9 mm	1.75 mm	2 W	Dual	Si	N-Channel	30 V	6.5 A	29 mOhms	Enhancement	4.5 ns, 5 ns	2.5 ns, 11 ns	2 N-Channel		20 ns, 25 ns	7 ns, 8 ns
	TPCS8204		GET PRICE	PDF RFQ	45,000 In-stock	Toshiba Semiconductor	MOSFET	12 V	SMD/SMT	TSSOP-Advance-8	- 55 C	+ 150 C		2 Channel	3.65 mm	3.5 mm	0.75 mm	1.1 W	Dual	Si	N-Channel	20 V	6 A	17 mOhms	Enhancement	5 ns	10 ns
	FDQ7238S		GET PRICE	PDF RFQ	22,500 In-stock	onsemi	MOSFET N-Channel PowerTrench	16 V			- 55 C	+ 150 C		2 Channel	8.6 mm	3.9 mm	1.45 mm		Dual	Si	N-Channel				Enhancement		13 ns		Reel					2500	338 mg	30 V	14 A	7 mOhms	2.4 W	28 ns, 51 ns	11 ns, 14 ns
	SSM6N15FU		GET PRICE	PDF RFQ	85,000 In-stock	Toshiba	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type		SMD/SMT					2 Channel	2 mm	1.25 mm	0.9 mm		Dual	Si	N-Channel							2 N-Channel				MOSFETs	MOSFET

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