- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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17,933
In-stock
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Diodes Incorporated | MOSFET P-Ch ENH FET -30V 2.4mOhm -10V -300mA | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | Si | P-Channel | - 30 V | - 300 mA | 2.4 Ohms | - 2.4 V | 1.2 nC | Enhancement | |||||
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2,260
In-stock
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Diodes Incorporated | MOSFET FET BVDSS 25V-30V P-Ch 36A 7.5Vgs 6324 | +/- 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 36 A | 5.7 mOhms | - 2.1 V | 126.2 nC | Enhancement | ||||
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2,000
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh FET 20Vgss 0.9W -80A | +/- 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8.6 A | 25 mOhms | - 2.1 V | 47 nC | Enhancement | ||||
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2,806
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET 30V 20Vgs | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 17 A | 6.5 mOhms | - 2.1 V | 59.2 nC | Enhancement | ||||
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3,840
In-stock
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Diodes Incorporated | MOSFET P-Ch ENH FET -30V 70mOhm -10V -3.8A | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A, - 5.6 A | 70 mOhms | - 3 V | 11 nC | Enhancement | ||||
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8,885
In-stock
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Diodes Incorporated | MOSFET 30V P-CH MOSFET | +/- 20 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 400 mA | 2.4 Ohms | - 2.3 V | 1.3 nC | Enhancement | ||||
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2,884
In-stock
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Diodes Incorporated | MOSFET 30V P-CH ENHANCEMENT 2.4mOhm -10V -300mA | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 300 mA | 2.4 Ohms | - 2.4 V | 1.2 nC | Enhancement | ||||
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450
In-stock
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Diodes Incorporated | MOSFET 30V P-CH MOSFET | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 300 mA | 2.4 Ohms | - 2.4 V | 1.2 nC | Enhancement | ||||
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3,000
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh FET 20Vgss 0.9W -80A | +/- 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8.6 A | 25 mOhms | - 2.1 V | 47 nC | Enhancement | ||||
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3,000
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enhancement Mode | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A | 70 mOhms | - 3 V | 8.2 nC | Enhancement |