- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
17,933
In-stock
|
Diodes Incorporated | MOSFET P-Ch ENH FET -30V 2.4mOhm -10V -300mA | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | Si | P-Channel | - 30 V | - 300 mA | 2.4 Ohms | - 2.4 V | 1.2 nC | Enhancement | ||||
|
|
2,884
In-stock
|
Diodes Incorporated | MOSFET 30V P-CH ENHANCEMENT 2.4mOhm -10V -300mA | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 300 mA | 2.4 Ohms | - 2.4 V | 1.2 nC | Enhancement | |||
|
|
450
In-stock
|
Diodes Incorporated | MOSFET 30V P-CH MOSFET | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 300 mA | 2.4 Ohms | - 2.4 V | 1.2 nC | Enhancement | |||
|
|
3,000
In-stock
|
Diodes Incorporated | MOSFET 30V P-Ch Enhancement Mode | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A | 70 mOhms | - 3 V | 8.2 nC | Enhancement |
