- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
16 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,773
In-stock
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Diodes Incorporated | MOSFET 30V N Chnl UMOS | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2 A | 150 mOhms | 0.7 V | 2.93 nC | Enhancement | |||||
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3,023
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgs 80mOhm | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.5 A | 150 mOhms | 1 V | 5.8 nC | Enhancement | |||||
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1,619
In-stock
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Diodes Incorporated | MOSFET 60V N-Chnl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 3.5 A | 150 mOhms | Enhancement | |||||||
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305
In-stock
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Diodes Incorporated | MOSFET Dual P-Channel | 12 V | SMD/SMT | SOT-26-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 2 A | 150 mOhms | Enhancement | |||||||
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3,674
In-stock
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Diodes Incorporated | MOSFET P-CH. MOSFET BVDSS: 25V-30V, AEC-Q101 | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.5 A | 150 mOhms | - 1.3 V | 12 nC | Enhancement | |||||
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5,340
In-stock
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Diodes Incorporated | MOSFET P-Channel | 12 V | SMD/SMT | DFN1411-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 150 mOhms | Enhancement | |||||||
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10,972
In-stock
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Diodes Incorporated | MOSFET N-CH MOSFET 12V | 6 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 1.41 A | 150 mOhms | 350 mV | 1.5 nC | Enhancement | |||||
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5,588
In-stock
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Diodes Incorporated | MOSFET P-Channel .25W | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 150 mOhms | Enhancement | |||||||
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3,268
In-stock
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Diodes Incorporated | MOSFET -20V -860mA | 12 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 860 mA | 150 mOhms | Enhancement | |||||||
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1,202
In-stock
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Diodes Incorporated | MOSFET 30V N-Chnl HDMOS | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4.7 A | 150 mOhms | Enhancement | |||||||
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672
In-stock
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Diodes Incorporated | MOSFET 30V 3.5A P-CHANNEL | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.5 A | 150 mOhms | Enhancement | |||||||
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1,976
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Intellifet 200mohm 2A 490mJ | 5 V | SMD/SMT | SOT-223-3 | - 40 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2 A | 150 mOhms | 700 mV | Enhancement | IntelliFET | |||||
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3,000
In-stock
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Diodes Incorporated | MOSFET 600mW 30Vdss | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2 A | 150 mOhms | Enhancement | |||||||
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VIEW | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 U-WLB1015-6 T&R 3K | SMD/SMT | U-WLB1510-6 | Reel | Si | P-Channel | - 20 V | - 2.5 A | 150 mOhms | ||||||||||||
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995
In-stock
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Diodes Incorporated | MOSFET Dual 20V N Chl HDMOS | 12 V | SMD/SMT | MSOP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 2.4 A | 150 mOhms | Enhancement | |||||||
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12,500
In-stock
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Diodes Incorporated | MOSFET Low Side IntelliFET | 5 V | SMD/SMT | SO-8 | - 40 C | + 125 C | Reel | 1 Channel | N-Channel | 60 V | 2 A | 150 mOhms | 0.7 V | Enhancement | IntelliFET |