- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
-
- DFN1411-3 (1)
- MSOP-8 (1)
- PLUS-264-3 (1)
- SO-8 (6)
- SOT-223-3 (2)
- SOT-23-3 (5)
- SOT-26-6 (3)
- SOT-323-3 (1)
- SOT-363-6 (1)
- SOT-563-6 (3)
- SSOT-6 (1)
- TO-220-3 (15)
- TO-220FP-3 (3)
- TO-247-3 (11)
- TO-252-3 (11)
- TO-262-3 (2)
- TO-263-3 (8)
- TO-264-3 (3)
- TO-268-3 (2)
- TO-3PN-3 (2)
- U-WLB1510-6 (1)
- VS6-6 (1)
- VSON-Clip-8 (1)
- X1-DFN1006-3 (1)
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 1.5 A (2)
- - 104 A (1)
- - 2 A (3)
- - 2.2 A (1)
- - 2.5 A (1)
- - 24 A (2)
- - 27 A (5)
- - 3.5 A (2)
- - 4 A (1)
- - 5.5 A (1)
- - 860 mA (1)
- - 950 mA (1)
- 1.41 A (1)
- 10 A (1)
- 11 A (1)
- 11.8 A (1)
- 12 A (1)
- 17 A (6)
- 18 A (4)
- 19.4 A (2)
- 2 A (4)
- 2.4 A (1)
- 2.5 A (1)
- 20 A (9)
- 21 A (4)
- 22 A (2)
- 22.4 A (1)
- 23 A (4)
- 24 A (4)
- 25 A (1)
- 3.5 A (6)
- 32 A (4)
- 35 A (1)
- 4.7 A (1)
- 40 A (1)
- 45 A (1)
- 50 A (1)
- 72 A (1)
- 8.7 A (1)
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
86 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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512
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 24 A | 150 mOhms | 3 V | 43 nC | Enhancement | ||||
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3,115
In-stock
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Fairchild Semiconductor | MOSFET N-Channel FET Enhancement Mode | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 12 A | 150 mOhms | Enhancement | ||||||
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2,458
In-stock
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IR / Infineon | MOSFET 1 P-CH -150V HEXFET 150mOhms 21nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 27 A | 150 mOhms | 21 nC | Enhancement | |||||
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19,440
In-stock
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IR / Infineon | MOSFET MOSFT PCh -150V -27A 150mOhm 21nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 150 V | - 27 A | 150 mOhms | 21 nC | ||||||||
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800
In-stock
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Fairchild Semiconductor | MOSFET 600V NCH FRFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20 A | 150 mOhms | Enhancement | SuperFET | |||||
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4,981
In-stock
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Infineon Technologies | MOSFET MOSFT DUAL N/PCh 30V 3.5A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 3.5 A | 150 mOhms | 6.9 nC | ||||||||
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4,820
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20 A | 150 mOhms | 2 V | 35 nC | Enhancement | |||||
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GET PRICE |
13,960
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20 A | 150 mOhms | 2 V | 35 nC | Enhancement | ||||
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12,500
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 21A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 21 A | 150 mOhms | 2.5 V | 52 nC | Enhancement | CoolMOS | |||
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5,945
In-stock
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IR / Infineon | MOSFET MOSFT DUAL NCh 20V 3.5A | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 3.5 A | 150 mOhms | 3 V | 15 nC | |||||
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776
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 22 A | 150 mOhms | 3 V | 36 nC | Enhancement | ||||
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4,809
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 26mOhms 70nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8.7 A | 150 mOhms | 4 V | 6.9 nC | Enhancement | ||||
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618
In-stock
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STMicroelectronics | MOSFET N-chanel 600 V 0.120 Ohm typ 24 A | 25 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 23 A | 150 mOhms | 4 V | 62.5 nC | |||||||
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5,445
In-stock
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Fairchild Semiconductor | MOSFET 20V P-Ch PowerTrench Integrated | 12 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.2 A | 150 mOhms | Enhancement | PowerTrench | |||||
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20,122
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 18A 150mOhm 44.7nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 18 A | 150 mOhms | 44.7 nC | Enhancement | |||||
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1,762
In-stock
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Infineon Technologies | MOSFET MOSFT 17A 22.7nC 100mOhm LogLvAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 17 A | 150 mOhms | 22.7 nC | ||||||||
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1,823
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 19.4 A | 150 mOhms | Enhancement | QFET | |||||
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471
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 650V, 190 mOhm, FRFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 24 A | 150 mOhms | 5 V | 72 nC | SuperFET II FRFET | ||||
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4,773
In-stock
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Diodes Incorporated | MOSFET 30V N Chnl UMOS | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2 A | 150 mOhms | 0.7 V | 2.93 nC | Enhancement | ||||
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1,942
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 11A 100mOhm 22.7nC LogLv | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 11 A | 150 mOhms | 22.7 nC | ||||||||
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960
In-stock
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STMicroelectronics | MOSFET N-Ch 60V 10A OmniFET | 20 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 60 V | 10 A | 150 mOhms | ||||||||||
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683
In-stock
|
IR / Infineon | MOSFET Automotive MOSFET 27A, 71 nC, D2Pak | SMD/SMT | TO-252-3 | Tube | Si | P-Channel | - 150 V | - 27 A | 150 mOhms | 71 nC | ||||||||||
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3,023
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgs 80mOhm | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.5 A | 150 mOhms | 1 V | 5.8 nC | Enhancement | ||||
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9,678
In-stock
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onsemi | MOSFET SWITCHING DEVICE | SMD/SMT | SOT-563-6 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 150 mOhms | ||||||||||
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180
In-stock
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STMicroelectronics | MOSFET Nchanl 600V 0120 Ohm typ 24 A Pwr MOSFET | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 23 A | 150 mOhms | 4 V | 62.5 nC | |||||||
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784
In-stock
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Infineon Technologies | MOSFET 200V 24A 0.15 Ohm 25nC Qg 18A ID | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 18 A | 150 mOhms | 44.7 nC | Enhancement | |||||
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333
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 11.8 A | 150 mOhms | Enhancement | QFET | |||||
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770
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Ch QFET Logic Level | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 19.4 A | 150 mOhms | Enhancement | ||||||
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101
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 650V, 150 mOhm, FRFET | 20 V, 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 24 A | 150 mOhms | 5 V | 72 nC | SuperFET II FRFET | ||||
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1,619
In-stock
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Diodes Incorporated | MOSFET 60V N-Chnl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 3.5 A | 150 mOhms | Enhancement |
