- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
9,692
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 1V-60V SO-8 T&R 2.5K | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 5 A | 55 mOhms | 3 V | 22.4 nC | Enhancement | |||
|
|
2,937
In-stock
|
Diodes Incorporated | MOSFET 60V P-Channel 6.8A MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 10.4 A | 55 mOhms | - 1 V | 44 nC | Enhancement | |||
|
|
1,602
In-stock
|
Diodes Incorporated | MOSFET Dl 60V P-Chnl UMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 60 V | - 4.8 A | 55 mOhms | - 1 V | 23 nC | Enhancement | |||
|
|
5
In-stock
|
Diodes Incorporated | MOSFET 20V N-Channel MOSFET w/low gate drive cap | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.3 A | 55 mOhms | Enhancement | |||||
|
|
909,000
In-stock
|
Diodes Incorporated | MOSFET 900mW 20Vdss | 8 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.3 A | 55 mOhms | Enhancement |
