- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
41 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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32,136
In-stock
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Fairchild Semiconductor | MOSFET 20V Dual N-Channel PowerTrench | 8 V | SMD/SMT | UMLP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 3.4 A | 55 mOhms | 0.7 V | 3 nC | PowerTrench | ||||
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14,172
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 24 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 26 A | 55 mOhms | Enhancement | ||||||
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17,026
In-stock
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IR / Infineon | MOSFET P-CHANNEL -20V -6.9A 32mOhm -2.5V capable | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6.9 A | 55 mOhms | ||||||||
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9,692
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 1V-60V SO-8 T&R 2.5K | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 5 A | 55 mOhms | 3 V | 22.4 nC | Enhancement | ||||
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5,650
In-stock
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Fairchild Semiconductor | MOSFET SSOT-6 N-CH 60V | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 4.3 A | 55 mOhms | Enhancement | PowerTrench | |||||
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13,287
In-stock
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Fairchild Semiconductor | MOSFET 60V/-60V N/P | 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V | 4.5 A | 55 mOhms | Enhancement | PowerTrench | |||||
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2,078
In-stock
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Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 4.5 A | 55 mOhms | 3.4 V | 10.6 nC | PowerTrench | ||||
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2,488
In-stock
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STMicroelectronics | MOSFET N-Ch 60 Volt 4 Amp | 15 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 4 A | 55 mOhms | Enhancement | ||||||
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2,937
In-stock
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Diodes Incorporated | MOSFET 60V P-Channel 6.8A MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 10.4 A | 55 mOhms | - 1 V | 44 nC | Enhancement | ||||
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GET PRICE |
4,992
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 55mOhms 11nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 34 A | 55 mOhms | 11 nC | Enhancement | ||||
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5,208
In-stock
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STMicroelectronics | MOSFET N-Ch 60 Volt 5 Amp | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 5 A | 55 mOhms | Enhancement | ||||||
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1,498
In-stock
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Infineon Technologies | MOSFET 200V SINGLE N-CH 55mOhms 91nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 44 A | 55 mOhms | 5.5 V | 91 nC | Enhancement | ||||
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142
In-stock
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IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 94 A | 55 mOhms | Polar2 HiPerFET | ||||||
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14,247
In-stock
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Nexperia | MOSFET P-CH -20 V -3.5 A | SMD/SMT | SOT-23-3 | Reel | Si | P-Channel | - 20 V | - 3.5 A | 55 mOhms | 11 nC | ||||||||||
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1,600
In-stock
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Fairchild Semiconductor | MOSFET 60V P-Channel QFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 27 A | 55 mOhms | Enhancement | ||||||
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1,602
In-stock
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Diodes Incorporated | MOSFET Dl 60V P-Chnl UMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 60 V | - 4.8 A | 55 mOhms | - 1 V | 23 nC | Enhancement | ||||
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2,850
In-stock
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onsemi | MOSFET NCH+NCH 7A 30V 4V DR | 20 V | SMD/SMT | ECH-8 | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 7 A | 55 mOhms | 1.2 V | 11.8 nC | Enhancement | |||||
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56
In-stock
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IXYS | MOSFET TrenchP Power MOSFET | Through Hole | TO-268-3 | Tube | 1 Channel | Si | P-Channel | - 200 V | - 68 A | 55 mOhms | ||||||||||
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88
In-stock
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IXYS | MOSFET -50 Amps -100V 0.055 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 50 A | 55 mOhms | - 5 V | 140 nC | Enhancement | ||||
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GET PRICE |
4,600
In-stock
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IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 94 A | 55 mOhms | Polar2 HiPerFET | |||||
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1,954
In-stock
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Nexperia | MOSFET P-CH -20 V -4.1 A | SMD/SMT | TSOP-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.1 A | 55 mOhms | 13 nC | |||||||||
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VIEW | IXYS | MOSFET TrenchP Power MOSFET | Through Hole | TO-247-3 | Tube | Si | P-Channel | - 200 V | - 68 A | 55 mOhms | |||||||||||
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30
In-stock
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IXYS | MOSFET -50 Amps -100V 0.055 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 50 A | 55 mOhms | Enhancement | ||||||
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244
In-stock
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Fairchild Semiconductor | MOSFET -35V P-Channel PowerTrench | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 35 V | - 4.3 A | 55 mOhms | Enhancement | PowerTrench | |||||
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5
In-stock
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Diodes Incorporated | MOSFET 20V N-Channel MOSFET w/low gate drive cap | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.3 A | 55 mOhms | Enhancement | ||||||
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80
In-stock
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onsemi | MOSFET 20V 4.2A 60MOHM PFET | +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 55 mOhms | - 1.2 V | 10 nC | Enhancement | ||||
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66
In-stock
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Toshiba | MOSFET N-Ch DTMOSIV 600 V 50W 4100pF 38.8A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 38.8 A | 55 mOhms | 3.7 V | 110 nC | Enhancement | ||||
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52
In-stock
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Toshiba | MOSFET DTMOSIV-H/S 600V 65mOhmmax(VGS=10V) | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 38.8 A | 55 mOhms | 3.5 V | 85 nC | Enhancement | ||||
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20,000
In-stock
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Toshiba | MOSFET DTMOSIV 600V 65mOhm 38.8A 270W 4100pF | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 38.8 A | 55 mOhms | 2.7 V to 3.7 V | 110 nC | DTMOSIV | |||||
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26
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 500 V | 84 A | 55 mOhms | 2.5 V | 340 nC | Enhancement |
