- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,000
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 31V~40V SO-8 T&R 2.5K | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 8.6 A, 8.6 A | 10 mOhms, 10 mOhms | 1 V, 1 V | 33 nC, 33 nC | Enhancement | |||
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4,505
In-stock
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 30V DUAL N-CHANNEL | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 7.2 A, 7.2 A | 24 mOhms, 24 mOhms | 1 V, 1 V | 12.9 nC, 12.9 nC | Enhancement | |||
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2,088
In-stock
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Diodes Incorporated | MOSFET Dual N-Ch 60V 8ohm 5V VGS 170mA | 20 V, 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 180 mA, 180 mA | 8 Ohms | 1 V, 1 V | 870 pC, 870 pC | Enhancement | |||
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2,811
In-stock
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Diodes Incorporated | MOSFET N-Ch 30V Dual Enh 30Vgss 0.77W 399pF | 20 V, 20 V | SMD/SMT | V-DFN3020-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 5.5 A, 5.5 A | 45 mOhms, 45 mOhms | 1 V, 1 V | 9.9 nC, 9.9 nC | Enhancement | |||
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2,519
In-stock
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Diodes Incorporated | MOSFET 60V Dual N-Ch FET 40mOhm 10V 5.0A | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 5 A, 5 A | 30 mOhms, 30 mOhms | 1 V, 1 V | 22.4 nC, 22.4 nC | Enhancement | |||
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9,000
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V | 20 V, 20 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 7.7 A, 7.7 A | 20 mOhms, 20 mOhms | 1 V, 1 V | 7 nC, 7 nC | Enhancement | |||
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14,500
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgss 0.8W 600pF | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.5 A | 120 mOhms | 1 V, 1 V | 12.3 nC | Enhancement | |||
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VIEW | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | N-Channel | 60 V, 60 V | 7.6 A, 7.6 A | 15 mOhms, 15 mOhms | 1 V, 1 V | 17 nC, 17 nC | Enhancement | ||||
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VIEW | Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgss 0.8W 600pF | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.5 A | 120 mOhms | 1 V, 1 V | 12.3 nC | Enhancement |