- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- 0.8 A, 0.8 A (1)
- 103 A, 103 A (1)
- 15 A, 15 A (1)
- 17 A, 17 A (1)
- 180 mA, 180 mA (1)
- 2.5 A (2)
- 20 A, 20 A (4)
- 20 A, 60 A (2)
- 22 A, 22 A (2)
- 300 mA, 300 mA (1)
- 33 A, 33 A (1)
- 40 A, 40 A (2)
- 5 A, 5 A (1)
- 5.1 A, 5.1 A (1)
- 5.5 A, 5.5 A (1)
- 56 A, 109 A (1)
- 56 A, 84 A (1)
- 7.2 A, 7.2 A (1)
- 7.6 A, 7.6 A (1)
- 7.7 A, 7.7 A (3)
- 8.6 A, 8.6 A (1)
- 9.3 A, 9.3 A (2)
- Rds On - Drain-Source Resistance :
-
- 0.0052 Ohms, 0.0025 Ohms (1)
- 0.0074 Ohms, 0.0031 Ohms (1)
- 1 Ohms, 1 Ohms (1)
- 10 mOhms, 10 mOhms (1)
- 12.5 mOhms, 12.5 mOhms (2)
- 12.5 mOhms, 12.5 mOms (2)
- 120 mOhms (2)
- 15 mOhms, 15 mOhms (1)
- 18.3 mOhms, 18.3 mOhms (2)
- 2.2 MOhms, 2.2 MOhms (1)
- 20 mOhms, 20 mOhms (1)
- 235 mOhms, 235 mOhms (1)
- 24 mOhms, 24 mOhms (1)
- 27 mOhms, 27 mOhms (1)
- 3.5 mOhms, 900 uOhms (2)
- 30 mOhms, 30 mOhms (1)
- 31 mOhms, 31 mOhms (1)
- 4.3 mOhms, 4.3 mOhms (1)
- 45 mOhms, 45 mOhms (1)
- 5.4 mOhms, 5.4 mOhms (1)
- 6 mOhms, 6 mOhms (2)
- 65 mOhms, 65 mOhms (1)
- 7 mOhms, 2.4 mOhms (1)
- 7 mOhms, 3.4 mOhms (1)
- 8 Ohms (1)
- 8.7 mOhms, 8.7 mOhms (1)
- Qg - Gate Charge :
-
- 10 nC, 10 nC (2)
- 12.3 nC (2)
- 12.9 nC, 12.9 nC (1)
- 13.2 nC, 13.2 nC (2)
- 17 nC, 17 nC (3)
- 17 nC, 39 nC (1)
- 17 nC, 62 nC (1)
- 18 nC, 43 nC (1)
- 20 nC, 20 nC (2)
- 22 nC, 54 nC (1)
- 22.4 nC, 22.4 nC (1)
- 29 nC, 29 nC (1)
- 33 nC, 33 nC (1)
- 40 nC, 40 nC (1)
- 41 nC, 41 nC (2)
- 49 nC, 49 nC (1)
- 6.6 nC, 30.6 nC (2)
- 7 nC, 7 nC (1)
- 81 nC, 81 nC (1)
- 870 pC, 870 pC (1)
- 9.9 nC, 9.9 nC (1)
- 900 pC, 900 pC (1)
- 92 nC, 92 nC (1)
- Applied Filters :
32 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,000
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 31V~40V SO-8 T&R 2.5K | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 8.6 A, 8.6 A | 10 mOhms, 10 mOhms | 1 V, 1 V | 33 nC, 33 nC | Enhancement | ||||
|
|
2,835
In-stock
|
Fairchild Semiconductor | MOSFET PT8+ N & PT8 N | 20 V, 12 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 56 A, 84 A | 7 mOhms, 3.4 mOhms | 1 V, 1 V | 17 nC, 39 nC | Enhancement | PowerTrench Power Clip | |||
|
|
3,000
In-stock
|
Fairchild Semiconductor | MOSFET PT8+ N & PT8 N | 20 V, 12 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 56 A, 109 A | 7 mOhms, 2.4 mOhms | 1 V, 1 V | 17 nC, 62 nC | Enhancement | PowerTrench Power Clip | |||
|
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2,660
In-stock
|
Fairchild Semiconductor | MOSFET 60V/20V Dual N-Ch PowerTrench MOSFET | 20 V, 20 V | SMD/SMT | PQFN-12 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 15 A, 15 A | 8.7 mOhms, 8.7 mOhms | 1 V, 1 V | 49 nC, 49 nC | Enhancement | Power Clip | |||
|
|
1,480
In-stock
|
Fairchild Semiconductor | MOSFET 60V Dual N-Channel PowerTrench MOSFET | 20 V, 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 22 A, 22 A | 5.4 mOhms, 5.4 mOhms | 1 V, 1 V | 92 nC, 92 nC | Enhancement | ||||
|
|
1,415
In-stock
|
Fairchild Semiconductor | MOSFET 40V Dual N-Channel PowerTrench MOSFET | 20 V, 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 33 A, 33 A | 2.2 MOhms, 2.2 MOhms | 1 V, 1 V | 81 nC, 81 nC | Enhancement | ||||
|
|
4,522
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3 | 20 V, 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 20 A, 20 A | 12.5 mOhms, 12.5 mOms | 1 V, 1 V | 13.2 nC, 13.2 nC | Enhancement | OptiMOS | |||
|
|
3,814
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3 | 20 V, 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 20 A, 20 A | 6 mOhms, 6 mOhms | 1 V, 1 V | 41 nC, 41 nC | Enhancement | OptiMOS | |||
|
|
4,465
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 9.3A DSO-8 OptiMOS 3M | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 9.3 A, 9.3 A | 12.5 mOhms, 12.5 mOhms | 1 V, 1 V | 17 nC, 17 nC | Enhancement | OptiMOS | |||
|
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3,987
In-stock
|
IR / Infineon | MOSFET PLANAR_MOSFETS | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 55 V, 55 V | 5.1 A, 5.1 A | 65 mOhms, 65 mOhms | 1 V, 1 V | 29 nC, 29 nC | Enhancement | ||||
|
|
5,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3 | 20 V, 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 20 A, 20 A | 12.5 mOhms, 12.5 mOms | 1 V, 1 V | 13.2 nC, 13.2 nC | Enhancement | OptiMOS | |||
|
|
1,050
In-stock
|
Fairchild Semiconductor | MOSFET 40V 103 A Dual NChnl Power Trench MOSFET | 20 V, 20 V | SMD/SMT | PQFN-12 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 103 A, 103 A | 4.3 mOhms, 4.3 mOhms | 1 V, 1 V | 40 nC, 40 nC | Enhancement | Power Clip | |||
|
|
2,950
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 7.7A DSO-8 OptiMOS 3M | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 7.7 A, 7.7 A | 18.3 mOhms, 18.3 mOhms | 1 V, 1 V | 10 nC, 10 nC | Enhancement | OptiMOS | |||
|
|
4,505
In-stock
|
Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 30V DUAL N-CHANNEL | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 7.2 A, 7.2 A | 24 mOhms, 24 mOhms | 1 V, 1 V | 12.9 nC, 12.9 nC | Enhancement | ||||
|
|
2,610
In-stock
|
Siliconix / Vishay | MOSFET Dual N Ch 12V Vds AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 12 V, 12 V | 20 A, 60 A | 0.0052 Ohms, 0.0025 Ohms | 1 V, 1 V | 22 nC, 54 nC | Enhancement | TrenchFET | |||
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|
2,923
In-stock
|
Siliconix / Vishay | MOSFET Dual N Ch 20V Vds AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 20 A, 60 A | 0.0074 Ohms, 0.0031 Ohms | 1 V, 1 V | 18 nC, 43 nC | Enhancement | TrenchFET | |||
|
|
2,088
In-stock
|
Diodes Incorporated | MOSFET Dual N-Ch 60V 8ohm 5V VGS 170mA | 20 V, 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 180 mA, 180 mA | 8 Ohms | 1 V, 1 V | 870 pC, 870 pC | Enhancement | ||||
|
|
1,475
In-stock
|
onsemi | MOSFET NFET SO8FL 60V 22A 3 | 20 V, 20 V | SMD/SMT | DFN-5x6-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 22 A, 22 A | 27 mOhms, 27 mOhms | 1 V, 1 V | 20 nC, 20 nC | Enhancement | ||||
|
|
2,811
In-stock
|
Diodes Incorporated | MOSFET N-Ch 30V Dual Enh 30Vgss 0.77W 399pF | 20 V, 20 V | SMD/SMT | V-DFN3020-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 5.5 A, 5.5 A | 45 mOhms, 45 mOhms | 1 V, 1 V | 9.9 nC, 9.9 nC | Enhancement | ||||
|
|
1,430
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 9.3A DSO-8 OptiMOS 3M | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 9.3 A, 9.3 A | 12.5 mOhms, 12.5 mOhms | 1 V, 1 V | 17 nC, 17 nC | Enhancement | OptiMOS | |||
|
|
1,500
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 7.7A DSO-8 OptiMOS 3M | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 7.7 A, 7.7 A | 18.3 mOhms, 18.3 mOhms | 1 V, 1 V | 10 nC, 10 nC | Enhancement | OptiMOS | |||
|
|
49
In-stock
|
Infineon Technologies | MOSFET TRANSITIONAL MOSFETS | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V, 25 V | 40 A, 40 A | 3.5 mOhms, 900 uOhms | 1 V, 1 V | 6.6 nC, 30.6 nC | Enhancement | ||||
|
|
2,519
In-stock
|
Diodes Incorporated | MOSFET 60V Dual N-Ch FET 40mOhm 10V 5.0A | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 5 A, 5 A | 30 mOhms, 30 mOhms | 1 V, 1 V | 22.4 nC, 22.4 nC | Enhancement | ||||
|
|
770
In-stock
|
onsemi | MOSFET NFET SC88 60V 295MA 1.6OH | 20 V, 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 300 mA, 300 mA | 1 Ohms, 1 Ohms | 1 V, 1 V | 900 pC, 900 pC | Enhancement | ||||
|
|
4,435
In-stock
|
Toshiba | MOSFET Small-signal MOSFET N-Channel | 8 V, 8 V | SMD/SMT | ES6-6 | - | - | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 0.8 A, 0.8 A | 235 mOhms, 235 mOhms | 1 V, 1 V | ||||||
|
|
9,000
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V | 20 V, 20 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 7.7 A, 7.7 A | 20 mOhms, 20 mOhms | 1 V, 1 V | 7 nC, 7 nC | Enhancement | ||||
|
|
14,500
In-stock
|
Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgss 0.8W 600pF | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.5 A | 120 mOhms | 1 V, 1 V | 12.3 nC | Enhancement | ||||
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|
VIEW | onsemi | MOSFET Pwr MOSFET 60V 17A 39mOhmDual N-CH | 20 V, 20 V | SMD/SMT | DFN-5x6-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 17 A, 17 A | 31 mOhms, 31 mOhms | 1 V, 1 V | 20 nC, 20 nC | Enhancement | ||||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3 | 20 V, 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 20 A, 20 A | 6 mOhms, 6 mOhms | 1 V, 1 V | 41 nC, 41 nC | Enhancement | OptiMOS | |||
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VIEW | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | N-Channel | 60 V, 60 V | 7.6 A, 7.6 A | 15 mOhms, 15 mOhms | 1 V, 1 V | 17 nC, 17 nC | Enhancement |
