- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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11,319
In-stock
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Diodes Incorporated | MOSFET 30V Comp ENH Mode 25 to 30V MosFET | +/- 12 V, +/- 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 3.8 A, - 2.5 A | 34 mOhms, 70 mOhms | 500 mV, - 1.2 V | 12.3 nC, 13.8 nC | Enhancement | |||
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431
In-stock
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Diodes Incorporated | MOSFET N-Ch Dual MOSFET 20V VDSS 12V VGSS | +/- 12 V, +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 4.6 A, - 4.6 A | 55 mOhms, 55 mOhms | - 1.1 V, - 1.1 V | 6.5 nC, 6.5 nC | Enhancement | |||
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2,915
In-stock
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Diodes Incorporated | MOSFET 20V Complementary 12Vgs 0.6mm ESD | +/- 12 V, +/- 12 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 4.7 A, - 3.2 A | 23 mOhms, 59 mOhms | 350 mV, - 1.4 V | 15 nC, 18 nC | Enhancement |
