- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,434
In-stock
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Fairchild Semiconductor | MOSFET Automotive / SuperFET1 / 600V / 4.6A / 1.05 OHM | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 4.6 A | 3.2 Ohms | 3 V | 16 nC | Enhancement | SuperFET | |||
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3,302
In-stock
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Fairchild Semiconductor | MOSFET 650V SUPERFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 4.6 A | 810 mOhms | Enhancement | SuperFET | |||||
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2,490
In-stock
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Fairchild Semiconductor | MOSFET 600V 4.6A N-Channel | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 4.6 A | 950 mOhms | Enhancement | SuperFET | |||||
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4,520
In-stock
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Fairchild Semiconductor | MOSFET N-Ch 200V 4.6A 0.8OHM | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 4.6 A | 800 mOhms | |||||||
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4,980
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.6 A | 810 mOhms | Enhancement |
