- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Id - Continuous Drain Current :
-
- - 1.5 A (8)
- - 1.7 A (1)
- - 10 A (1)
- - 100 A (3)
- - 11 A (2)
- - 11.3 A (1)
- - 12 A (2)
- - 14.8 A (2)
- - 14.9 A (2)
- - 16 A (1)
- - 2 A (3)
- - 2.3 A, - 2.3 A (1)
- - 22.5 A (1)
- - 3.6 A (1)
- - 39.6 A (4)
- - 4.6 A (3)
- - 4.9 A (1)
- - 40 A (9)
- - 5.5 A (2)
- - 5.8 A (1)
- - 6.3 A (1)
- - 760 mA (1)
- - 78.6 A (3)
- - 8 A (1)
- - 8.2 A (1)
- - 9.1 A (1)
- Rds On - Drain-Source Resistance :
-
- 10 mOhms (1)
- 100 mOhms (1)
- 107 mOhms (3)
- 11.7 mOhms (1)
- 113 mOhms (3)
- 13 mOhms (2)
- 13.5 mOhms (4)
- 130 mOhms (2)
- 140 mOhms (1)
- 16.1 mOhms (1)
- 18 mOhms (1)
- 2.3 mOhms (2)
- 20 mOhms (1)
- 21 mOhms (3)
- 230 mOhms (1)
- 25 mOhms (1)
- 270 mOhms (1)
- 31 mOhms (2)
- 57 mOhms, 57 mOhms (1)
- 58 mOhms (1)
- 6 mOhms (1)
- 6.1 mOhms (2)
- 6.5 mOhms (5)
- 600 mOhms (1)
- 62 mOhms (3)
- 66 mOhms (1)
- 70 mOhms (1)
- 8 mOhms (5)
- 8.4 mOhms (1)
- 9 mOhms (4)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- - 0.7 nC (1)
- - 102 nC (2)
- - 2.3 nC (3)
- - 2.9 nC (4)
- - 29 nC (2)
- - 36 nC (1)
- - 40 nC (1)
- - 5 nC (3)
- - 61 nC (2)
- 1.6 nC, 1.6 nC (1)
- 16 nC (2)
- 16.7 nC (1)
- 18 nC (2)
- 186 nC (2)
- 20.9 nC (1)
- 23 nC (1)
- 27 nC (2)
- 3.4 nC (1)
- 30 nC (4)
- 43.4 nC (1)
- 45 nC (4)
- 52 nC (1)
- 57.5 nC (5)
- 58 nC (2)
- 59 nC (1)
- 61 nC (2)
- 7.5 nC (1)
- Tradename :
57 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
4,060
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 6.5 mOhms | - 3.1 V | 57.5 nC | Enhancement | OptiMOS | |||
|
|
6,560
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 6.5 mOhms | - 3.1 V | 57.5 nC | Enhancement | OptiMOS | |||
|
|
2,574
In-stock
|
Infineon Technologies | MOSFET DUAL -30V P-CH 20V VGS MAX | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 30 V | - 8 A | 21 mOhms | 52 nC | Enhancement | |||||
|
|
11,541
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -100A TDSON-8 OptiMOS P3 | 25 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 100 A | 6 mOhms | 61 nC | OptiMOS | |||||
|
|
3,238
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V 25.4A TDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 100 A | 2.3 mOhms | - 3.1 V | 186 nC | Enhancement | ||||
|
|
5,722
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V 16A TDSON-8 OptiMOS P | 25 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 16 A | 8 mOhms | Enhancement | OptiMOS | |||||
|
|
3,979
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 78.6 A | 6.1 mOhms | - 3.1 V | 58 nC | Enhancement | OptiMOS | |||
|
|
3,441
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -14.9A DSO-8 OptiMOS P | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 14.9 A | 8 mOhms | - 102 nC | Enhancement | OptiMOS | ||||
|
|
2,651
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -14.9A DSO-8 OptiMOS P | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 14.9 A | 8 mOhms | - 102 nC | Enhancement | OptiMOS | ||||
|
|
4,918
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -11.3A DSO-8 OptiMOS P | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11.3 A | 13 mOhms | - 61 nC | Enhancement | OptiMOS | ||||
|
|
4,496
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 6.5 mOhms | - 3.1 V | 57.5 nC | Enhancement | ||||
|
|
2,943
In-stock
|
Infineon Technologies | MOSFET MOSFT PCh -30V -4.6A 70mOhm 27nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.6 A | 130 mOhms | - 3 V | 27 nC | |||||
|
|
4,739
In-stock
|
Infineon Technologies | MOSFET 30V SGL P-CH HEXFET Pwr MOSFET | 25 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 18 mOhms | - 1.8 V | 16 nC | SmallPowIR | ||||
|
|
2,355
In-stock
|
Infineon Technologies | MOSFET DUAL -30V P-CH 20V VGS MAX | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 30 V | - 4.9 A | 58 mOhms | 23 nC | Enhancement | |||||
|
|
5,352
In-stock
|
Infineon Technologies | MOSFET 1 P-CH -30V HEXFET 14.6mOhms 16nC | 25 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 11.7 mOhms | - 1.8 V | 16 nC | Enhancement | ||||
|
|
16,416
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -2A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 62 mOhms | - 2 V | - 5 nC | Enhancement | ||||
|
|
2,360
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -14.8A DSO-8 OptiMOS 3P3 | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 14.8 A | 8 mOhms | Enhancement | OptiMOS | |||||
|
|
3,073
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -14.8A DSO-8 OptiMOS 3P3 | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 14.8 A | 8 mOhms | - 61 nC | Enhancement | OptiMOS | ||||
|
|
2,965
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 6.5 mOhms | - 3.1 V | 57.5 nC | Enhancement | ||||
|
|
5,044
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 9 mOhms | - 3.1 V | 45 nC | Enhancement | OptiMOS | |||
|
|
1,780
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -9.1A DSO-8 OptiMOS P | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9.1 A | 21 mOhms | - 40 nC | Enhancement | OptiMOS | ||||
|
|
1,363
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -8.2A DSO-8 OptiMOS P | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 8.2 A | 21 mOhms | - 36 nC | Enhancement | OptiMOS | ||||
|
|
5,598
In-stock
|
Infineon Technologies | MOSFET MOSFT DUAL PCh -30V 1.7A Micro 8 | 20 V | SMD/SMT | Micro-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 1.7 A | 270 mOhms | 7.5 nC | Enhancement | |||||
|
|
2,959
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -2A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 62 mOhms | - 2 V | - 5 nC | Enhancement | ||||
|
|
44,430
In-stock
|
Infineon Technologies | MOSFET MOSFT P-Ch -0.61A 600mOhm 3.4nC LogLvl | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 760 mA | 600 mOhms | - 1 V | 3.4 nC | |||||
|
|
369
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V 25.4A TDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 100 A | 2.3 mOhms | - 3.1 V | 186 nC | Enhancement | OptiMOS | |||
|
|
3,384
In-stock
|
Infineon Technologies | MOSFET 1 P-CH -30V HEXFET 70mOhms 27nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 4.6 A | 130 mOhms | 27 nC | Enhancement | |||||
|
|
1,760
In-stock
|
Infineon Technologies | MOSFET MOSFT P-Ch -30V -12A 11.9mOhm | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 16.1 mOhms | - 1.8 V | 18 nC | |||||
|
|
573
In-stock
|
Infineon Technologies | MOSFET 1 P-CH -30V HEXFET 45mOhms 39.3nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 5.8 A | 70 mOhms | - 1 V | 59 nC | Enhancement | ||||
|
|
3,028
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -2A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 62 mOhms | - 2 V | - 5 nC | Enhancement |
