- Vgs - Gate-Source Voltage :
- Package / Case :
- Rds On - Drain-Source Resistance :
-
- 10 mOhms (1)
- 107 mOhms (3)
- 11.7 mOhms (1)
- 113 mOhms (3)
- 13 mOhms (2)
- 13.5 mOhms (4)
- 130 mOhms (2)
- 140 mOhms (1)
- 16.1 mOhms (1)
- 18 mOhms (1)
- 2.3 mOhms (2)
- 20 mOhms (1)
- 21 mOhms (1)
- 230 mOhms (1)
- 25 mOhms (1)
- 31 mOhms (2)
- 57 mOhms, 57 mOhms (1)
- 6 mOhms (1)
- 6.1 mOhms (2)
- 6.5 mOhms (5)
- 600 mOhms (1)
- 62 mOhms (3)
- 66 mOhms (1)
- 70 mOhms (1)
- 8 mOhms (5)
- 8.4 mOhms (1)
- 9 mOhms (4)
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
52 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,060
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 6.5 mOhms | - 3.1 V | 57.5 nC | Enhancement | OptiMOS | ||||
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6,560
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 6.5 mOhms | - 3.1 V | 57.5 nC | Enhancement | OptiMOS | ||||
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11,541
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -100A TDSON-8 OptiMOS P3 | 25 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 100 A | 6 mOhms | 61 nC | OptiMOS | ||||||
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3,238
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 25.4A TDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 100 A | 2.3 mOhms | - 3.1 V | 186 nC | Enhancement | |||||
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5,722
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 16A TDSON-8 OptiMOS P | 25 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 16 A | 8 mOhms | Enhancement | OptiMOS | ||||||
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3,979
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 78.6 A | 6.1 mOhms | - 3.1 V | 58 nC | Enhancement | OptiMOS | ||||
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3,441
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -14.9A DSO-8 OptiMOS P | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 14.9 A | 8 mOhms | - 102 nC | Enhancement | OptiMOS | |||||
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2,651
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -14.9A DSO-8 OptiMOS P | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 14.9 A | 8 mOhms | - 102 nC | Enhancement | OptiMOS | |||||
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4,918
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -11.3A DSO-8 OptiMOS P | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11.3 A | 13 mOhms | - 61 nC | Enhancement | OptiMOS | |||||
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4,496
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 6.5 mOhms | - 3.1 V | 57.5 nC | Enhancement | |||||
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2,943
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -30V -4.6A 70mOhm 27nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.6 A | 130 mOhms | - 3 V | 27 nC | ||||||
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4,739
In-stock
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Infineon Technologies | MOSFET 30V SGL P-CH HEXFET Pwr MOSFET | 25 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 18 mOhms | - 1.8 V | 16 nC | SmallPowIR | |||||
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5,352
In-stock
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Infineon Technologies | MOSFET 1 P-CH -30V HEXFET 14.6mOhms 16nC | 25 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 11.7 mOhms | - 1.8 V | 16 nC | Enhancement | |||||
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16,416
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -2A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 62 mOhms | - 2 V | - 5 nC | Enhancement | |||||
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2,360
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -14.8A DSO-8 OptiMOS 3P3 | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 14.8 A | 8 mOhms | Enhancement | OptiMOS | ||||||
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3,073
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -14.8A DSO-8 OptiMOS 3P3 | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 14.8 A | 8 mOhms | - 61 nC | Enhancement | OptiMOS | |||||
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2,965
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 6.5 mOhms | - 3.1 V | 57.5 nC | Enhancement | |||||
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5,044
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 9 mOhms | - 3.1 V | 45 nC | Enhancement | OptiMOS | ||||
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1,780
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -9.1A DSO-8 OptiMOS P | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9.1 A | 21 mOhms | - 40 nC | Enhancement | OptiMOS | |||||
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2,959
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -2A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 62 mOhms | - 2 V | - 5 nC | Enhancement | |||||
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44,430
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -0.61A 600mOhm 3.4nC LogLvl | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 760 mA | 600 mOhms | - 1 V | 3.4 nC | ||||||
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369
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 25.4A TDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 100 A | 2.3 mOhms | - 3.1 V | 186 nC | Enhancement | OptiMOS | ||||
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3,384
In-stock
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Infineon Technologies | MOSFET 1 P-CH -30V HEXFET 70mOhms 27nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 4.6 A | 130 mOhms | 27 nC | Enhancement | ||||||
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1,760
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -30V -12A 11.9mOhm | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 16.1 mOhms | - 1.8 V | 18 nC | ||||||
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573
In-stock
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Infineon Technologies | MOSFET 1 P-CH -30V HEXFET 45mOhms 39.3nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 5.8 A | 70 mOhms | - 1 V | 59 nC | Enhancement | |||||
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3,028
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -2A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 62 mOhms | - 2 V | - 5 nC | Enhancement | |||||
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9,355
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -1.5A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.5 A | 113 mOhms | - 2 V | - 2.3 nC | Enhancement | |||||
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GET PRICE |
24,170
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 9 mOhms | - 3.1 V | 45 nC | Enhancement | OptiMOS | |||
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2,590
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.5 A | 31 mOhms | - 2 V | - 29 nC | Enhancement | |||||
|
305
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 6.3 A | 25 mOhms | - 2 V | 20.9 nC | Enhancement |