- Mounting Style :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
-
- 1.5 Ohms (2)
- 100 mOhms (9)
- 110 mOhms (3)
- 120 mOhms (8)
- 150 mOhms (3)
- 154 mOhms (1)
- 160 mOhms (13)
- 170 mOhms (5)
- 2.3 Ohms (2)
- 200 mOhms (8)
- 220 mOhms (1)
- 230 mOhms (7)
- 250 mOhms (2)
- 30 Ohms (4)
- 300 mOhms (2)
- 4.6 Ohms (3)
- 400 mOhms (1)
- 480 mOhms (2)
- 55 mOhms (2)
- 550 mOhms (3)
- 80 mOhms (1)
- 90 mOhms (5)
- Qg - Gate Charge :
- Channel Mode :
- Tradename :
87 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,645
In-stock
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IXYS | MOSFET 0.2 A 500V 30 Rds | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 200 mA | 30 Ohms | - | - | Depletion | ||||
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114
In-stock
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IXYS | MOSFET 40 Amps 500V | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 500 V | 40 A | 170 mOhms | 4.5 V | 320 nC | Enhancement | Linear L2 | ||||
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89
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 500V 6A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 6 A | 550 mOhms | - 4.5 V | 96 nC | Depletion | ||||
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206
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 500V 1.6A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 1.6 A | 2.3 Ohms | 23.7 nC | ||||||
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155
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 500V 6A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 6 A | 550 mOhms | 96 nC | ||||||
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273
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 500V 3A | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 3 A | 1.5 Ohms | 40 nC | ||||||
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238
In-stock
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IXYS | MOSFET 0.2 Amps 500V 30 Rds | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 200 mA | 30 Ohms | - | - | Depletion | ||||
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147
In-stock
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IXYS | MOSFET LINEAR L2 SERIES MOSFET 500V 15A | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 500 V | 15 A | 480 mOhms | 4.5 V | 123 nC | Enhancement | Linear L2 | ||||
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250
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 500V 800MA | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 800 mA | 4.6 Ohms | 12.7 nC | ||||||
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334
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 500V 3A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 3 A | 1.5 Ohms | 40 nC | ||||||
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27
In-stock
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IXYS | MOSFET 40 Amps 500V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 40 A | 170 mOhms | 4.5 V | 320 nC | Enhancement | Linear L2 | |||
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32
In-stock
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IXYS | MOSFET N-CH 500V 16A MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 300 mOhms | 199 nC | ||||||
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53
In-stock
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IXYS | MOSFET 30.0 Amps 500V 0.002 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | 4.5 V | 240 nC | Enhancement | Linear L2 | |||
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86
In-stock
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IXYS | MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 15 A | 480 mOhms | 2.5 V | 123 nC | Enhancement | LinearL2 | |||
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86
In-stock
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IXYS | MOSFET D2 Depletion Mode Power MOSFETs | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 300 mOhms | - 2 V | 199 nC | Depletion | ||||
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43
In-stock
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IXYS | MOSFET 40 Amps 500V | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 40 A | 170 mOhms | 4.5 V | 320 nC | Enhancement | Linear L2 | |||
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119
In-stock
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IXYS | MOSFET N-CH MOSFETS 500V 800MA | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 800 mA | 4.6 Ohms | |||||||
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140
In-stock
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IXYS | MOSFET N-CH MOSFETS 500V 800MA | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 800 mA | 4.6 Ohms | 12.7 nC | ||||||
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50
In-stock
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IXYS | MOSFET 0.2 Amps 500V 30 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 200 mA | 30 Ohms | Depletion | ||||||
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161
In-stock
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IXYS | MOSFET 0.2 Amps 500V 30 Rds | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 200 mA | 30 Ohms | Depletion | ||||||
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17
In-stock
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IXYS | MOSFET 21 Amps 500V | 20 V | Through Hole | ISOPLUS-i4-PAK-5 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 21 A | 220 mOhms | 4.5 V | 95 nC | Enhancement | ISOPLUS i4-PAC | |||
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20
In-stock
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IXYS | MOSFET LINEAR L2 SERIES MOSFET 500V 30A | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | 4.5 V | 240 nC | Enhancement | Linear L2 | |||
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GET PRICE |
300
In-stock
|
IXYS | MOSFET 500V 80A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 80 A | 55 mOhms | Enhancement | HyperFET | ||||
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27
In-stock
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IXYS | MOSFET 500V 55A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 55 A | 80 mOhms | Enhancement | HyperFET | |||||
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21
In-stock
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IXYS | MOSFET 25 Amps 500V | 20 V | V1-A-Pack-10 | - 40 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 500 V | 35 A | 120 mOhms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 55 Amps 500V 0.08 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 55 A | 90 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 43 Amps 500V 0.1 Rds | 20 V | SMD/SMT | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 43 A | 100 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET N-CH MOSFETS (D2) 500V 6A | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 6 A | 550 mOhms | 96 nC | ||||||
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VIEW | IXYS | MOSFET N-CH MOSFETS (D2) 500V 1.6A | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 1.6 A | 2.3 Ohms | 23.7 nC | Depletion | |||||
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VIEW | IXYS | MOSFET DIODE Id26 BVdass500 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 200 mOhms | Enhancement | HyperFET |
