- Mounting Style :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
24 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
175
In-stock
|
IXYS | MOSFET 500V 98A 0.05Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 98 A | 50 mOhms | 5 V | 197 nC | HyperFET | ||||||
|
|
25
In-stock
|
IXYS | MOSFET 60 Amps 500V | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 500 V | 60 A | 100 mOhms | 4.5 V | 610 nC | Enhancement | LinearL2 | ||||
|
|
112
In-stock
|
IXYS | MOSFET 500V 44A | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 44 A | 140 mOhms | Enhancement | HyperFET | |||||
|
|
19
In-stock
|
IXYS | MOSFET 500V 80A | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 80 A | 65 mOhms | Enhancement | HyperFET | |||||
|
|
28
In-stock
|
IXYS | MOSFET 500V 64A | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 64 A | 85 mOhms | Enhancement | HyperFET | |||||
|
|
9
In-stock
|
IXYS | MOSFET tbd Amps 500V 0.06 Ohms Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 70 A | 52 mOhms | 5 V | 240 nC | Enhancement | PolarHV, ISOPLUS264, HiPerFET | |||
|
|
GET PRICE |
4,600
In-stock
|
IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 94 A | 55 mOhms | Polar2 HiPerFET | |||||
|
|
25
In-stock
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/64A | 30 V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 64 A | 85 mOhms | 145 nC | HyperFET | |||||||
|
|
27
In-stock
|
IXYS | MOSFET 46 Amps 500V | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 46 A | 160 mOhms | 6 V | 260 nC | Enhancement | ||||
|
|
22
In-stock
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/80A | 30 V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 80 A | 65 mOhms | 200 nC | HyperFET | |||||||
|
|
21
In-stock
|
IXYS | MOSFET 500V 78A 0.068Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 78 A | 68 mOhms | 5 V | 147 nC | HyperFET | ||||||
|
|
VIEW | IXYS | MOSFET Polar3 HiPerFET Power MOSFET | Through Hole | TO-264-3 | Tube | Si | N-Channel | 500 V | 63 A | 43 mOhms | HyperFET | ||||||||||
|
|
40
In-stock
|
IXYS | MOSFET DIODE Id48 BVdass500 | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 48 A | 100 mOhms | Enhancement | HyperFET | |||||
|
|
VIEW | IXYS | MOSFET 500V 55A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 55 A | 90 mOhms | Enhancement | HyperFET | |||||
|
|
VIEW | IXYS | MOSFET 48 Amps 500V 0.1 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 48 A | 100 mOhms | Enhancement | HyperFET | |||||
|
|
VIEW | IXYS | MOSFET 33 Amps 500V 0.17 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 33 A | 170 mOhms | Enhancement | ||||||
|
|
VIEW | IXYS | MOSFET 50 Amps 500V 0.1 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 50 A | 100 mOhms | Enhancement | HyperFET | |||||
|
|
VIEW | IXYS | MOSFET 33 Amps 500V 0.16 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 33 A | 160 mOhms | Enhancement | HyperFET | |||||
|
|
VIEW | IXYS | MOSFET 48 Amps 500V 0.1 Rds | 20 V | SMD/SMT | TO-264-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 48 A | 90 mOhms | Enhancement | HyperFET | |||||
|
|
VIEW | IXYS | MOSFET 32 Amps 500V 0.15 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 32 A | 160 mOhms | Enhancement | HyperFET | |||||
|
|
VIEW | IXYS | MOSFET 35 Amps 500V 0.15 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 35 A | 150 mOhms | Enhancement | HyperFET | |||||
|
|
VIEW | IXYS | MOSFET 44 Amps 500V 0.12 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 44 A | 120 mOhms | Enhancement | HyperFET | |||||
|
|
VIEW | IXYS | MOSFET 55 Amps 500V 0.08W Rds | Through Hole | TO-264-3 | Tube | Si | N-Channel | 500 V | 55 A | 80 mOhms | |||||||||||
|
|
VIEW | IXYS | MOSFET 30 Amps 500V 0.16 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 160 mOhms | Enhancement |
