- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Tradename :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4
In-stock
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IXYS | MOSFET Trench T2 HiperFET Power MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 100 V | 130 A | 9.1 mOhms | 4.5 V | 130 nC | Enhancement | TrenchT2, HiperFET | ||||
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VIEW | IXYS | MOSFET Trench T2 HiperFET Power MOSFET | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 130 A | 9.1 mOhms | HiPerFET | |||||||||
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VIEW | IXYS | MOSFET MOSFET Id130 BVdass100 | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 130 A | 8.5 mOhms | Enhancement | |||||||
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5
In-stock
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IXYS | MOSFET 130 Amps 100V 8.5 Rds | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 130 A | 8.5 mOhms | Enhancement | |||||||
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GET PRICE |
3,200
In-stock
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IXYS | MOSFET 130 Amps 100V 8.5 Rds | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 130 A | 8.5 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 130 Amps 100V 8.5 Rds | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 130 A | 8.5 mOhms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 130 Amps 100V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 100 V | 130 A | 9.1 mOhms | |||||||||||
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VIEW | IXYS | MOSFET 130 Amps 100V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 130 A | 9.1 mOhms |
