- Vds - Drain-Source Breakdown Voltage :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Tradename | |
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VIEW | IXYS | MOSFET 800V 13A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 13 A | 800 mOhms | Enhancement | HyperFET | ||||
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VIEW | IXYS | MOSFET 13 Amps 1100V 0.92 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1100 V | 13 A | 800 mOhms | Enhancement | |||||
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VIEW | IXYS | MOSFET 13 Amps 900V 0.8 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 13 A | 800 mOhms | Enhancement | HyperFET | ||||
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VIEW | IXYS | MOSFET 13 Amps 800V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 13 A | 800 mOhms | Enhancement |