- Mounting Style :
- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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30
In-stock
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IXYS | MOSFET 26 Amps 1200V 1 Rds | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 13 A | 630 mOhms | Enhancement | HyperFET | ||||||
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30
In-stock
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IXYS | MOSFET 14 Amps 800V 0.42 Rds | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 13 A | 420 mOhms | 5 V | 105 nC | Enhancement | HyperFET | ||||
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25
In-stock
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IXYS | MOSFET PHASE LEG MOSFET MOD HALF-BRIDGE 500V 1... | 30 V | Through Hole | ISOPLUS-i4-PAK-5 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 500 V | 13 A | 270 mOhms | 5 V | 50 nC | PolarHV | |||||
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VIEW | IXYS | MOSFET 800V 13A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 13 A | 800 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 13 Amps 1100V 0.92 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1100 V | 13 A | 800 mOhms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 13 Amps 900V 0.8 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 13 A | 800 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 13 Amps 800V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 13 A | 800 mOhms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 13 Amps 800V 0.8 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 13 A | 700 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 13 Amps 800V 0.6 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 13 A | 600 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 13 Amps 800V 0.8 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 13 A | 700 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 13 Amps 500V 0.4 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 13 A | 400 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 13 Amps 500V 0.4 Rds | Through Hole | TO-247-3 | Tube | Si | N-Channel | 500 V | 13 A | 400 mOhms |