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Vgs - Gate-Source Voltage :
Number of Channels :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
FMM22-05PF
1+
$16.590
10+
$15.250
25+
$14.620
100+
$12.880
RFQ
25
In-stock
IXYS MOSFET PHASE LEG MOSFET MOD HALF-BRIDGE 500V 1... 30 V Through Hole ISOPLUS-i4-PAK-5 - 55 C + 150 C Tube 2 Channel Si N-Channel 500 V 13 A 270 mOhms 5 V 50 nC   PolarHV
IXFH13N80
60+
$9.310
120+
$8.200
270+
$7.800
510+
$7.300
VIEW
RFQ
IXYS MOSFET 800V 13A 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 13 A 800 mOhms     Enhancement HyperFET
IXTH13N110
30+
$15.490
120+
$13.650
270+
$12.980
510+
$12.140
VIEW
RFQ
IXYS MOSFET 13 Amps 1100V 0.92 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1100 V 13 A 800 mOhms     Enhancement  
IXFH13N90
30+
$10.740
120+
$9.460
270+
$8.990
510+
$8.410
VIEW
RFQ
IXYS MOSFET 13 Amps 900V 0.8 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 900 V 13 A 800 mOhms     Enhancement HyperFET
IXTH13N80
30+
$9.570
120+
$8.310
270+
$7.940
510+
$7.240
VIEW
RFQ
IXYS MOSFET 13 Amps 800V 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 13 A 800 mOhms     Enhancement  
IXFH13N80Q
30+
$9.310
120+
$8.200
270+
$7.800
510+
$7.300
VIEW
RFQ
IXYS MOSFET 13 Amps 800V 0.8 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 13 A 700 mOhms     Enhancement HyperFET
IXFR13N50
30+
$10.180
120+
$8.970
270+
$8.530
510+
$7.980
VIEW
RFQ
IXYS MOSFET 13 Amps 500V 0.4 Rds   Through Hole TO-247-3     Tube   Si N-Channel 500 V 13 A 400 mOhms        
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