- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Applied Filters :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
30
In-stock
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IXYS | MOSFET 16 Amps 1200V 1 Rds | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 9 A | 1.04 Ohms | Enhancement | HyperFET | ||||
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GET PRICE |
50
In-stock
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IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 9 A | 210 mOhms | 3 V | 35 nC | Enhancement | |||
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GET PRICE |
1
In-stock
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IXYS | MOSFET 9 Amps 800V 1.1 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 9 A | 1.1 Ohms | Enhancement | HyperFET | ||||
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VIEW | IXYS | MOSFET 9 Amps 800V 0.9 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 9 A | 900 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 9 Amps 800V 1.1W Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 9 A | 1.1 Ohms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 9 Amps 800V | Through Hole | TO-247-3 | Tube | Si | 800 V | 9 A | |||||||||||||
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VIEW | IXYS | MOSFET MOSFET w/FAST Intrinsic Diode | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 9 A | 1.2 Ohms | Enhancement |
