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Vgs - Gate-Source Voltage :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Channel Mode Tradename
IXFR16N120P
1+
$16.630
10+
$15.290
25+
$14.660
100+
$12.910
RFQ
30
In-stock
IXYS MOSFET 16 Amps 1200V 1 Rds 30 V SMD/SMT TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1200 V 9 A 1.04 Ohms Enhancement HyperFET
IXFH9N80Q
1+
$8.970
10+
$8.110
25+
$7.730
100+
$6.720
RFQ
1
In-stock
IXYS MOSFET 9 Amps 800V 1.1 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 9 A 1.1 Ohms Enhancement HyperFET
IXFH9N80
30+
$7.180
120+
$6.230
270+
$5.960
510+
$5.430
VIEW
RFQ
IXYS MOSFET 9 Amps 800V 0.9 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 9 A 900 mOhms Enhancement HyperFET
IXFR9N80Q
30+
$9.720
120+
$8.560
270+
$8.140
510+
$7.620
VIEW
RFQ
IXYS MOSFET 9 Amps 800V   Through Hole TO-247-3     Tube   Si   800 V 9 A      
IXFR10N100Q
30+
$27.770
120+
$24.830
270+
$23.680
510+
$22.540
VIEW
RFQ
IXYS MOSFET MOSFET w/FAST Intrinsic Diode 20 V SMD/SMT TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1000 V 9 A 1.2 Ohms Enhancement  
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