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24 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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219
In-stock
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IXYS | MOSFET MOSFET 650V/80A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 80 A | 40 mOhms | 2.7 V | 143 nC | Enhancement | ||||
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135
In-stock
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IXYS | MOSFET 88 Amps 300V 0.04 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 88 A | 40 mOhms | 5 V | 180 nC | Enhancement | PolarHT | |||
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40
In-stock
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IXYS | MOSFET 47 Amps 600V 0.045 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 40 mOhms | 3 V | 150 nC | Enhancement | CoolMOS | |||
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51
In-stock
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IXYS | MOSFET 88 Amps 300V 0.04 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 88 A | 40 mOhms | Enhancement | ||||||
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40
In-stock
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IXYS | MOSFET 88 Amps 100 V 0.04 Ohms Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 88 A | 40 mOhms | Enhancement | ||||||
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23
In-stock
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IXYS | MOSFET 70 Amps 600V | 20 V | SMD/SMT | TO-247-SMD-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 66 A | 40 mOhms | 2.5 V | 190 nC | Enhancement | ||||
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178
In-stock
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IXYS | MOSFET 62 Amps 150V 0.04 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 62 A | 40 mOhms | Enhancement | ||||||
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30
In-stock
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IXYS | MOSFET 88 Amps 300V 0.04 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 88 A | 40 mOhms | 5 V | 180 nC | Enhancement | Polar, HiPerFET | |||
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11
In-stock
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IXYS | MOSFET PHASE LEG MOSFET MOD HALF-BRIDGE 33V 33... | 30 V | Through Hole | ISOPLUS-i4-PAK-5 | - 55 C | + 150 C | Tube | Si | N-Channel | 200 V | 33 A | 40 mOhms | 4.5 V | 90 nC | ||||||
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49
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 200V/70A | 30 V | SMD/SMT | TO-268-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 70 A | 40 mOhms | 67 nC | Enhancement | HyperFET | |||||
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31
In-stock
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IXYS | MOSFET 60 Amps 200V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 200 V | 60 A | 40 mOhms | ||||||||||
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34
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 200V/70A | 30 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 70 A | 40 mOhms | 67 nC | Enhancement | HyperFET | |||||
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15
In-stock
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IXYS | MOSFET 88 Amps 300V 0.04 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 88 A | 40 mOhms | Enhancement | ||||||
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1
In-stock
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IXYS | MOSFET 88 Amps 300V 0.04 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 88 A | 40 mOhms | 5 V | 180 nC | Enhancement | Polar, HiPerFET | |||
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30
In-stock
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IXYS | MOSFET POLAR HIPERFET WITH REDUCED RDS 300V 88... | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 300 V | 88 A | 40 mOhms | 5 V | 180 nC | Enhancement | Polar, HiPerFET | ||||
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VIEW | IXYS | MOSFET HiPerFET Power MOSFETs | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 200 V | 50 A | 40 mOhms | HiPerFET | |||||||||
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4
In-stock
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IXYS | MOSFET 62 Amps 150V 0.04 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 62 A | 40 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 200V 58A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 58 A | 40 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 200V 58A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 58 A | 40 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 200V 58A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 58 A | 40 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 58 Amps 200V 0.08W Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 58 A | 40 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 66 Amps 200V | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 66 A | 40 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 50 Amps 200V 0.04 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 50 A | 40 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 66 Amps 200V 0.04 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 66 A | 40 mOhms | Enhancement | HyperFET |
