- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Qg - Gate Charge :
- Tradename :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
135
In-stock
|
IXYS | MOSFET 88 Amps 300V 0.04 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 88 A | 40 mOhms | 5 V | 180 nC | Enhancement | PolarHT | |||
|
|
40
In-stock
|
IXYS | MOSFET 47 Amps 600V 0.045 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 40 mOhms | 3 V | 150 nC | Enhancement | CoolMOS | |||
|
|
51
In-stock
|
IXYS | MOSFET 88 Amps 300V 0.04 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 88 A | 40 mOhms | Enhancement | ||||||
|
|
40
In-stock
|
IXYS | MOSFET 88 Amps 100 V 0.04 Ohms Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 88 A | 40 mOhms | Enhancement | ||||||
|
|
23
In-stock
|
IXYS | MOSFET 70 Amps 600V | 20 V | SMD/SMT | TO-247-SMD-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 66 A | 40 mOhms | 2.5 V | 190 nC | Enhancement | ||||
|
|
178
In-stock
|
IXYS | MOSFET 62 Amps 150V 0.04 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 62 A | 40 mOhms | Enhancement | ||||||
|
|
30
In-stock
|
IXYS | MOSFET 88 Amps 300V 0.04 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 88 A | 40 mOhms | 5 V | 180 nC | Enhancement | Polar, HiPerFET | |||
|
|
15
In-stock
|
IXYS | MOSFET 88 Amps 300V 0.04 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 88 A | 40 mOhms | Enhancement | ||||||
|
|
1
In-stock
|
IXYS | MOSFET 88 Amps 300V 0.04 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 88 A | 40 mOhms | 5 V | 180 nC | Enhancement | Polar, HiPerFET | |||
|
|
30
In-stock
|
IXYS | MOSFET POLAR HIPERFET WITH REDUCED RDS 300V 88... | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 300 V | 88 A | 40 mOhms | 5 V | 180 nC | Enhancement | Polar, HiPerFET | ||||
|
|
4
In-stock
|
IXYS | MOSFET 62 Amps 150V 0.04 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 62 A | 40 mOhms | Enhancement | ||||||
|
|
VIEW | IXYS | MOSFET 200V 58A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 58 A | 40 mOhms | Enhancement | HyperFET | |||||
|
|
VIEW | IXYS | MOSFET 200V 58A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 58 A | 40 mOhms | Enhancement | HyperFET | |||||
|
|
VIEW | IXYS | MOSFET 200V 58A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 58 A | 40 mOhms | Enhancement | HyperFET | |||||
|
|
VIEW | IXYS | MOSFET 58 Amps 200V 0.08W Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 58 A | 40 mOhms | Enhancement | HyperFET | |||||
|
|
VIEW | IXYS | MOSFET 50 Amps 200V 0.04 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 50 A | 40 mOhms | Enhancement | HyperFET |
