- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,432
In-stock
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Toshiba | MOSFET DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 8 A | 420 mOhms | 2.7 V to 3.7 V | 18.5 nC | DTMOSIV | |||||
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1,854
In-stock
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Toshiba | MOSFET N-Ch FET 500V 4.0s IDSS 10 uA 0.7 Ohm | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 500 V | 8 A | 850 mOhms | ||||||||||||
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1,144
In-stock
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Toshiba | MOSFET N-Ch MOS 8A 60V 25W 400pF 0.054 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 8 A | 54 mOhms | |||||||||||
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207
In-stock
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Toshiba | MOSFET N-Ch 8A 30W FET 600V 570pF 18.5nC | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 8 A | 420 mOhms | 2.7 V to 3.7 V | 18.5 nC | Enhancement | ||||||
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4,172
In-stock
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Toshiba | MOSFET N-Ch U-MOSVI FET ID 0.8A 20VDSS 55pF | 8 V | SMD/SMT | SOT-416-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 8 A | 840 mOhms | 0.4 V to 1 V | 1 nC | ||||||
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92
In-stock
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Toshiba | MOSFET N-Ch FET 650V 4.5s IDSS 10 uA 0.7 Ohm | SMD/SMT | TO-220FP-3 | Reel | 1 Channel | Si | N-Channel | 650 V | 8 A | 840 mOhms | |||||||||||
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71
In-stock
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Toshiba | MOSFET DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 8 A | 420 mOhms | 2.7 V to 3.7 V | 18.5 nC | DTMOSIV | |||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 8 A | 440 mOhms | 3 V | 22 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET N-Ch MOS 8A 450V 35W 700pF 0.9 Ohm | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 450 V | 8 A | 900 mOhms | ||||||||||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 8 A | 440 mOhms | 3 V | 22 nC | Enhancement | |||||
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GET PRICE |
8,000
In-stock
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Toshiba | MOSFET N-Ch 30V FET 8A 15W 11nC | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 8 A | 29 mOhms | 11 nC | |||||||||
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GET PRICE |
8,000
In-stock
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Toshiba | MOSFET N-Ch 30V FET 8A 15W 11nC | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 8 A | 29 mOhms | 11 nC |