- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
-
- BGA-6 (2)
- D3PAK-3 (1)
- ECH-8 (1)
- MLP-12 (1)
- PLUS-247-3 (1)
- PowerPAK-1212-8 (3)
- SO-8 (6)
- SOIC-8 (4)
- SOT-23-3 (2)
- SOT-363-6 (1)
- SOT-416-3 (1)
- SSOT-3 (1)
- SSOT-6 (1)
- TO-220-3 (23)
- TO-220FP-3 (18)
- TO-247-3 (6)
- TO-251-3 (2)
- TO-252-3 (11)
- TO-262-3 (2)
- TO-263-3 (8)
- TO-264-3 (1)
- TO-39-3 (1)
- TO-3PF-3 (1)
- TO-3PN-3 (2)
- TSON-Advance-8 (2)
- TSOP-6 (4)
- U-DFN2020-E-6 (1)
- WSON-FET-6 (1)
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
-
- 0.014 Ohms (1)
- 0.02 Ohms (1)
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- 0.026 Ohms (3)
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- 1.3 Ohms (2)
- 1.4 Ohms (2)
- 1.45 Ohms (2)
- 1.5 Ohms (2)
- 1.53 Ohms (1)
- 1.55 Ohms (3)
- 1.9 Ohms (1)
- 14 mOhms (1)
- 16 mOhms (1)
- 168 mOhms (2)
- 17.5 mOhms (1)
- 17.8 mOhms (2)
- 180 mOhms (1)
- 19 mOhms (1)
- 2.5 Ohms (1)
- 20 mOhms (2)
- 20.5 mOhms (1)
- 21 mOhms (1)
- 22 mOhms (3)
- 23 mOhms, 23 mOhms (1)
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- 3.6 Ohms (2)
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- 600 mOhms (5)
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- 750 mOhms (1)
- 770 mOhms (2)
- 8.5 mOhms (1)
- 800 mOhms (8)
- 840 mOhms (2)
- 850 mOhms (3)
- 9.9 mOhms (1)
- 900 mOhms (2)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 1 nC (1)
- 10.9 nC (1)
- 11 nC (4)
- 12 nC (11)
- 12.4 nC (1)
- 12.7 nC (1)
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- 13.4 nC (1)
- 14 nC (3)
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- 15 nC (5)
- 16.5 nC (2)
- 18 nC (2)
- 18.5 nC (3)
- 19.1 nC (1)
- 20 nC (2)
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- 22 nC (7)
- 23 nC (2)
- 24 nC (2)
- 25 nC (1)
- 250 nC (2)
- 27 nC (2)
- 28.51 nC (1)
- 30.6 nC (1)
- 4 nC (1)
- 5.4 nC, 5.4 nC (1)
- 60 nC (7)
- 7 nC (1)
- 8.4 nC (2)
- 8.7 nC (1)
- 80 nC (2)
- Applied Filters :
108 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,462
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 8 A | 440 mOhms | 3 V | 15 nC | Enhancement | |||||
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950
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-263-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 8 A | 550 mOhms | 3 V | 15 nC | Enhancement | |||||
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2,206
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 8 A | 570 mOhms | 3 V | 4 nC | Enhancement | ||||
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250
In-stock
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STMicroelectronics | MOSFET | +/- 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 8 A | 600 mOhms | 3 V | 11 nC | Enhancement | |||||
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976
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 8 A | 440 mOhms | 3 V | 15 nC | Enhancement | |||||
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2,093
In-stock
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STMicroelectronics | MOSFET N-CH 1500V HI-VOLT PWRMESH PWR MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1500 V | 8 A | 2.5 Ohms | Enhancement | ||||||
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6,005
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel PowerTrench MOSFET | SMD/SMT | MLP-12 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel | 60 V | 8 A | 17.5 mOhms | PowerTrench | |||||||
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11,812
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 8A 17.8mOhm 24nC Dual | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel | 60 V | 8 A | 17.8 mOhms | 24 nC | ||||||||
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7,332
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8 A | 16 mOhms | PowerTrench | ||||||
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3,714
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8 A | 19 mOhms | 3.1 V | 13.4 nC | PowerTrench | ||||
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5,356
In-stock
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Fairchild Semiconductor | MOSFET SO-8 N-CH 60V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 8 A | 20 mOhms | Enhancement | PowerTrench | |||||
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6,325
In-stock
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IR / Infineon | MOSFET 60V DUAL N-CH HEXFET 17.8mOhm 24nC | 20 V | SMD/SMT | SO-8 | Tube | 2 Channel | Si | N-Channel | 60 V | 8 A | 17.8 mOhms | 24 nC | ||||||||
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2,673
In-stock
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Fairchild Semiconductor | MOSFET UniFET2 500V N-chan | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 125 C | Tube | 1 Channel | Si | N-Channel | 500 V | 8 A | 770 mOhms | 5 V | 14 nC | UniFET | ||||
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1,039
In-stock
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Fairchild Semiconductor | MOSFET 800V 8A NChn MOSFET SuperFET II, FRFET | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 850 mOhms | 2.5 V | 22 nC | Enhancement | SuperFET II | |||
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1,071
In-stock
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Fairchild Semiconductor | MOSFET 1000V N-Channe MOSFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 8 A | 1.45 Ohms | Enhancement | QFET | |||||
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4,193
In-stock
|
Vishay Semiconductors | MOSFET 60V 8A 33W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 8 A | 0.05 Ohms | 1.5 V | 12 nC | Enhancement | TrenchFET | |||
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599
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 950 V | 8 A | 800 mOhms | 4 V | 22 nC | Enhancement | ||||
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2,032
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 8 A | 600 mOhms | |||||||
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1,323
In-stock
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STMicroelectronics | MOSFET N-Ch 950V .65Ohm typ 8A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 8 A | 800 mOhms | 4 V | 22 nC | |||||
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2,167
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 8 A | 450 mOhms | 2 V | 12 nC | Enhancement | ||||
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1,034
In-stock
|
STMicroelectronics | MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 8 A | 600 mOhms | |||||||
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874
In-stock
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Fairchild Semiconductor | MOSFET 800V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 1.55 Ohms | Enhancement | QFET | |||||
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1,021
In-stock
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Fairchild Semiconductor | MOSFET 900V N-Chan Advance Q-FET C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 8 A | 1.4 Ohms | Enhancement | ||||||
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84,700
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel PowerTrench MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 8 A | 265 mOhms | Enhancement | ||||||
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1,049
In-stock
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Fairchild Semiconductor | MOSFET 900V N-Channel Adv Q-FET C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 8 A | 1.4 Ohms | Enhancement | QFET | |||||
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913
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 650mOhm Zener | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 650 mOhms | 4.5 V | 27 nC | SuperFET II | ||||
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12,500
In-stock
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Vishay Semiconductors | MOSFET 30V 8A 3W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8 A | 0.02 Ohms | 1.5 V | 14.5 nC | Enhancement | TrenchFET | |||
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5,255
In-stock
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Diodes Incorporated | MOSFET FET BVDSS 31V 40V N-Ch 8A 28Vgs 1060pF | 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 8 A | 20 mOhms | 2.4 V | 19.1 nC | Enhancement | ||||
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1,725
In-stock
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Vishay Semiconductors | MOSFET 60V 8A 39W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 8 A | 0.03 Ohms | 1.5 V | 20 nC | Enhancement | TrenchFET | |||
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|
950
In-stock
|
STMicroelectronics | MOSFET N-Ch 950V 0.65Ohm typ 8A Zener-protect | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 8 A | 800 mOhms | 4 V | 22 nC |
