- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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86,000
In-stock
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Toshiba | MOSFET N-Ch 7A 60W FET 600V 490pF 15nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7 A | 500 mOhms | 2.7 V to 3.7 V | 15 nC | Enhancement | |||
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1,865
In-stock
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Toshiba | MOSFET UMOSVIII 100V 48m max(VGS=10V) DPAK | 10 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 7 A | 48 mOhms | ||||||||
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225
In-stock
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Toshiba | MOSFET N-Ch DTMOSIV 600 V 60W 490pF 15nC 7A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7 A | 500 mOhms | 3.7 V | 15 nC | Enhancement | |||
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3,000
In-stock
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Toshiba | MOSFET WCSP6C S-MOS TRSTR Pd=0mW F=1MHz | 4.5 V | SMD/SMT | WCSP6C-6 | Reel | 1 Channel | Si | N-Channel | 12 V | 7 A | 14.4 mOhms | 5.4 nC | |||||||
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86,000
In-stock
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Toshiba | MOSFET DTMOSIV 600V 600mOhm DPKw/Hgh Speed Diode | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7 A | 540 mOhms | 4.5 V | 16 nC | Enhancement | |||
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VIEW | Toshiba | MOSFET N-Ch MOS 7A 500V 100W 600pF 1.22 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 500 V | 7 A | 1.22 Ohms |
