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Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Qg - Gate Charge :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
TK7A60W,S4VX
1+
$1.920
10+
$1.550
100+
$1.240
500+
$1.080
RFQ
588
In-stock
Toshiba MOSFET N-Ch 7A 30W FET 600V 490pF 15nC 30 V Through Hole TO-220FP-3 - 55 C + 150 C 1 Channel Si N-Channel 600 V 7 A 500 mOhms 2.7 V to 3.7 V 15 nC Enhancement
TK11A45D(STA4,Q,M)
1+
$1.850
10+
$1.490
100+
$1.190
500+
$1.040
RFQ
71
In-stock
Toshiba MOSFET N-Ch MOS 10A 40V 25W 410pF 0.029 30 V SMD/SMT TO-220FP-3 - 55 C + 150 C 1 Channel Si N-Channel 450 V 11 A 500 mOhms   20 nC  
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