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Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
TK10A80E,S4X
1+
$2.410
10+
$1.950
100+
$1.560
500+
$1.360
RFQ
14,200
In-stock
Toshiba MOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS 30 V Through Hole TO-220FP-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 800 V 10 A 700 mOhms 4 V 46 nC Enhancement
TK9J90E,S1E
1+
$3.170
10+
$2.550
100+
$2.320
250+
$2.100
RFQ
388
In-stock
Toshiba MOSFET PLN MOS 900V 1300m (VGS=10V) TO-3PN 30 V Through Hole TO-3PN-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 900 V 9 A 1 Ohms 4 V 46 nC Enhancement
TK9A90E,S4X
1+
$2.210
10+
$1.780
100+
$1.430
500+
$1.250
RFQ
46,800
In-stock
Toshiba MOSFET PLN MOS 900V 1300m (VGS=10V) TO-220SIS 30 V Through Hole TO-220FP-3 - 55 C + 150 C   1 Channel Si N-Channel 900 V 9 A 1 Ohms 4 V 46 nC Enhancement
TK10J80E,S1E
1+
$3.090
10+
$2.480
100+
$2.260
250+
$2.040
VIEW
RFQ
Toshiba MOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN 30 V Through Hole TO-3PN-3 - 55 C + 150 C   1 Channel Si N-Channel 800 V 10 A 700 mOhms 4 V 46 nC Enhancement
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