- Package / Case :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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4,340
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 59.9mOhms 34nC | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 4.6 A | 51 mOhms | 34 nC | Enhancement | Directfet | ||||
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29,180
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 34nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 104 A | 3.9 mOhms | 1.35 V to 2.35 V | 34 nC | Enhancement | StrongIRFET | |||
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40,000
In-stock
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IR / Infineon | MOSFET MOSFT 30V 13A 8mOhm 34nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 10.5 mOhms | 2 V | 34 nC | |||||
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8,000
In-stock
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IR / Infineon | MOSFET MOSFT 30V 20A 4mOhm 34nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 3.7 mOhms | 2.32 V | 34 nC |
