- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
24 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,000
In-stock
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Infineon Technologies | MOSFET HIGH POWER NEW | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 23 A | 88 mOhms | 3 V | 34 nC | Enhancement | ||||
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4,340
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 59.9mOhms 34nC | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 4.6 A | 51 mOhms | 34 nC | Enhancement | Directfet | ||||
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2,102
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10.2 A | 380 mOhms | 3.5 V | 34 nC | SuperFET II | ||||
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3,175
In-stock
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Infineon Technologies | MOSFET 20V DUAL N-CH HEXFET 22mOhms 34nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 100 V | 7.3 A | 22 mOhms | 34 nC | Enhancement | |||||
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6,949
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 81 A | 4.5 mOhms | 2 V | 34 nC | Enhancement | OptiMOS | |||
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4,238
In-stock
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Fairchild Semiconductor | MOSFET SINGLE PT8 N 30/20 SYNCFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 24 A | 2.2 mOhms | 1.7 V | 34 nC | Enhancement | PowerTrench SyncFET | ||||
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29,180
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 34nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 104 A | 3.9 mOhms | 1.35 V to 2.35 V | 34 nC | Enhancement | StrongIRFET | |||
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1,815
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | +/- 20 V | SMD/SMT | SOIC-8 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 10 A | 12.5 mOhms | 1 V | 34 nC | Enhancement | |||||
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40,000
In-stock
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IR / Infineon | MOSFET MOSFT 30V 13A 8mOhm 34nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 10.5 mOhms | 2 V | 34 nC | |||||
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GET PRICE |
48,410
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 81 A | 4.5 mOhms | 2 V | 34 nC | Enhancement | OptiMOS | ||
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1,880
In-stock
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Fairchild Semiconductor | MOSFET 30V Asymmetric Dual N-Channel Pwr Trench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 60 A | 10 mOhms | 2 V | 34 nC | Power Stage PowerTrench | ||||
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436
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 31mOhms 34nC | 16 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 4.6 A | 45 mOhms | 34 nC | Enhancement | |||||
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1,544
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 4.6A 31mOhm 34nC Log Lvl | 16 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.5 A | 45 mOhms | 1 V | 34 nC | |||||
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1,649
In-stock
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Infineon Technologies | MOSFET 500V 3.5A 2.2Ohm MotIRFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 6 A | 1.05 Ohms | 3 V to 5 V | 34 nC | Enhancement | ||||
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8,000
In-stock
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IR / Infineon | MOSFET MOSFT 30V 20A 4mOhm 34nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 3.7 mOhms | 2.32 V | 34 nC | |||||
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2,500
In-stock
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STMicroelectronics | MOSFET N-Channel 620V 1.1 Ohms 5.5A | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 5.5 A | 1.28 Ohms | 34 nC | Enhancement | |||||
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3,596
In-stock
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Diodes Incorporated | MOSFET 40V N-Ch Enh FET 20Vgs 19.2A 74nC | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 14.4 A | 7 mOhms | 3 V | 34 nC | Enhancement | ||||
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2,500
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 80V 20Vgss 80A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 65 A | 14 mOhms | 1 V | 34 nC | Enhancement | ||||
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VIEW | onsemi | MOSFET SWITCHING DEVICE | 20 V | SMD/SMT | ATPAK-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 18.5 mOhms | 34 nC | ||||||
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9,000
In-stock
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Diodes Incorporated | MOSFET 40V N-Ch Enh FET 20Vgs 19.2A 74nC | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 14.4 A | 7 mOhms | 3 V | 34 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET X35PBF Power MOSFET Trans VGS10V VDS30V | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 45 A | 1.8 mOhms | 1.3 V to 2.3 V | 34 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET MOSFET P-CH/NPN 32V, 6A | - 20 V | SMD/SMT | PS8-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel, NPN | - 32 V | - 5.5 A | 27 mOhms | - 2 V | 34 nC | |||||
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764
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.25Ohm 13A FDmesh II | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13 A | 290 mOhms | 4 V | 34 nC | |||||
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VIEW | STMicroelectronics | MOSFET N-Ch 620V 0.98 ohm 6.2A SuperFREDmesh3 | 30 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 620 V | 6.2 A | 1.15 Ohms | 4.5 V | 34 nC |
