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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.464
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RFQ
Infineon Technologies MOSFET N-CH 100V 6PQFN 6-VDFN Exposed Pad - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active 6-PQFN (2x2) 0 4000 N-Channel - 100V 11A (Tc) 42 mOhm @ 6.7A, 10V 2.3V @ 10µA 5.6nC @ 4.5V 440pF @ 50V 4.5V, 10V ±20V 11.5W (Tc)
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Per Unit
$0.430
RFQ
2,500
In-stock
Texas instruments MOSFET N-CH 25V 60A 8-SON 8-PowerTDFN NexFET™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-VSONP (5x6) 0 2500 N-Channel - 25V 15A (Ta), 60A (Tc) 8.2 mOhm @ 17A, 10V 2.3V @ 250µA 5.6nC @ 4.5V 800pF @ 12.5V 4.5V, 10V +16V, -12V 2.6W (Ta)
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