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Package / Case :
Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
Rds On (Max) @ Id, Vgs :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2117 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$1.680
RFQ
2,348
In-stock
Infineon Technologies MOSFET N-CH 30V 90A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220AB 0 1 N-Channel - 30V 90A (Tc) 9 mOhm @ 15A, 10V 3V @ 250µA 41nC @ 5V 2672pF @ 16V 4.5V, 10V ±20V 3.1W (Ta), 120W (Tc)
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Per Unit
$1.619
RFQ
9,600
In-stock
Infineon Technologies MOSFET N-CH 20V 30A DIRECTFET DirectFET™ Isometric MX HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete DIRECTFET™ MX 0 4800 N-Channel - 20V 30A (Ta), 150A (Tc) 2.2 mOhm @ 30A, 10V 2.45V @ 250µA 57nC @ 4.5V 5040pF @ 10V 4.5V, 10V ±20V 2.8W (Ta), 89W (Tc)
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Per Unit
$0.624
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Texas instruments MOSFET N-CH 25V 100A 8-SON 8-PowerTDFN NexFET™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-VSONP (5x6) 0 2500 N-Channel - 25V 24A (Ta), 100A (Tc) 3.9 mOhm @ 24A, 10V 1.9V @ 250µA 11.7nC @ 4.5V 1780pF @ 12.5V 4.5V, 10V +16V, -12V 3.1W (Ta)
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Per Unit
$1.470
RFQ
1,202
In-stock
Infineon Technologies MOSFET N-CH 30V 20A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 155°C (TJ) 8-SO 0 1 N-Channel - 30V 20A (Ta) 4 mOhm @ 20A, 10V 2.32V @ 250µA 51nC @ 4.5V 4310pF @ 15V 4.5V, 10V ±20V 2.5W (Ta)
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Per Unit
$0.502
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Texas instruments 40V N CH MOSFET 8-PowerTDFN NexFET™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-VSONP (5x6) 0 2500 N-Channel - 40V 124A (Tc) 5.3 mOhm @ 19A, 10V 2.4V @ 250µA 61nC @ 10V 4280pF @ 20V 4.5V, 10V ±20V 96W (Tc)
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Per Unit
$1.260
RFQ
1,347
In-stock
Infineon Technologies MOSFET N-CH 30V 13A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 1 N-Channel - 30V 13A (Ta) 11 mOhm @ 7.3A, 10V 3V @ 250µA 79nC @ 10V 1800pF @ 25V 4.5V, 10V ±20V 2.5W (Ta)
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Per Unit
$1.260
RFQ
1,605
In-stock
Infineon Technologies MOSFET N-CH 55V 42A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D-PAK 0 1 N-Channel - 55V 42A (Tc) 13.5 mOhm @ 36A, 10V 3V @ 250µA 35nC @ 5V 1570pF @ 25V 4.5V, 10V ±16V 110W (Tc)
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Infineon Technologies MOSFET P-CH 30V 22A DIRECTFET DirectFET™ Isometric MX HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete DIRECTFET™ MX 0 1000 P-Channel - 30V 22A (Ta), 160A (Tc) 2.9 mOhm @ 22A, 10V 2.4V @ 150µA 130nC @ 10V 7305pF @ 15V 4.5V, 10V ±20V 2.1W (Ta), 113W (Tc)
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Infineon Technologies MOSFET N-CH 40V 22A TSDSON-8 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PG-TDSON-8 0 5000 N-Channel - 40V 22A (Ta), 40A (Tc) 2.35 mOhm @ 20A, 10V 2V @ 250µA 37nC @ 10V 2630pF @ 20V 4.5V, 10V ±20V 2.1W (Ta), 69W (Tc)
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Infineon Technologies MOSFET P-CH 55V 3.4A 8-SOIC 8-SOIC (0.154", 3.90mm Width) FETKY™ Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 1 P-Channel Schottky Diode (Isolated) 55V 3.4A (Ta) 105 mOhm @ 3.4A, 10V 1V @ 250µA 38nC @ 10V 690pF @ 25V 4.5V, 10V ±20V 2W (Ta)
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Infineon Technologies MOSFET N-CH 55V 51A D2PAK - - Tube - Surface Mount -55°C ~ 175°C (TJ) Obsolete - 0 500 - - - - - - - - 4.5V, 10V ±16V -
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Infineon Technologies MOSFET N-CH 55V 51A TO-262 TO-220-3 - Tube - Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 1000 - - - - - - - - 4.5V, 10V ±16V -
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Infineon Technologies MOSFET N-CH 60V 270A TO262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 1000 N-Channel - 60V 195A (Tc) 2.4 mOhm @ 165A, 10V 2.5V @ 250µA 140nC @ 4.5V 11210pF @ 50V 4.5V, 10V ±16V 380W (Tc)
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Infineon Technologies MOSFET N-CH 100V 190A D2PAK-7P TO-263-7, D²Pak (6 Leads + Tab) Automotive, AEC-Q101, HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK (7-Lead) 0 150 N-Channel - 100V 190A (Tc) 3.9 mOhm @ 110A, 10V 2.5V @ 250µA 140nC @ 4.5V 11490pF @ 50V 4.5V, 10V ±16V 370W (Tc)
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Infineon Technologies MOSFET N-CH 100V 180A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Automotive, AEC-Q101, HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK 0 3000 N-Channel - 100V 180A (Tc) 4.3 mOhm @ 110A, 10V 2.5V @ 250µA 130nC @ 4.5V 11360pF @ 50V 4.5V, 10V ±16V 370W (Tc)
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Infineon Technologies MOSFET N-CH 60V 300A D2PAK-7P TO-263-7, D²Pak (6 Leads + Tab) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK (7-Lead) 0 1600 N-Channel - 60V 240A (Tc) 1.9 mOhm @ 180A, 10V 2.5V @ 250µA 160nC @ 4.5V 11270pF @ 50V 4.5V, 10V ±16V 380W (Tc)
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Infineon Technologies MOSFET N-CH 60V 270A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK 0 3000 N-Channel - 60V 195A (Tc) 2.4 mOhm @ 165A, 10V 2.5V @ 250µA 140nC @ 4.5V 11210pF @ 50V 4.5V, 10V ±16V 380W (Tc)
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Infineon Technologies MOSFET N-CH 40V 240A D2PAK-7P TO-263-8, D²Pak (7 Leads + Tab), TO-263CA HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK (7-Lead) 0 200 N-Channel - 40V 240A (Tc) 1.4 mOhm @ 200A, 10V 2.5V @ 250µA 180nC @ 4.5V 10990pF @ 40V 4.5V, 10V ±20V 380W (Tc)
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Infineon Technologies MOSFET N-CH 40V 343A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK 0 200 N-Channel - 40V 195A (Tc) 1.7 mOhm @ 195A, 10V 2.5V @ 250µA 162nC @ 4.5V 10315pF @ 25V 4.5V, 10V ±20V 375W (Tc)
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Infineon Technologies MOSFET N-CH 60V 99A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D-PAK 0 3000 N-Channel - 60V 50A (Tc) 6.8 mOhm @ 50A, 10V 2.5V @ 100µA 49nC @ 4.5V 3779pF @ 50V 4.5V, 10V ±16V 143W (Tc)
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Infineon Technologies MOSFET N-CH 40V 42A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D-PAK (TO-252AA) 0 450 N-Channel - 40V 42A (Tc) 4.9 mOhm @ 42A, 10V 2.5V @ 100µA 56nC @ 4.5V 3810pF @ 25V 4.5V, 10V ±16V 140W (Tc)
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Infineon Technologies MOSFET N-CH 100V 63A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D-PAK 0 450 N-Channel - 100V 42A (Tc) 14 mOhm @ 38A, 10V 2.5V @ 100µA 48nC @ 4.5V 3980pF @ 25V 4.5V, 10V ±16V 140W (Tc)
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Infineon Technologies MOSFET N-CH 55V 51A D2PAK - - Tape & Reel (TR) - Surface Mount -55°C ~ 175°C (TJ) Obsolete - 0 800 - - - - - - - - 4.5V, 10V ±16V -
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Infineon Technologies MOSFET N-CH 60V 200MA SOT23 TO-236-3, SC-59, SOT-23-3 Automotive, AEC-Q101, SIPMOS® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) SOT-23-3 0 3000 N-Channel - 60V 200mA (Ta) 5 Ohm @ 500mA, 10V 1.8V @ 26µA 1.5nC @ 10V 45pF @ 25V 4.5V, 10V ±20V 360mW (Ta)
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Infineon Technologies MOSFET N-CH 400V 170MA SOT-223 TO-261-4, TO-261AA SIPMOS® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PG-SOT223-4 0 2000 N-Channel - 400V 170mA (Ta) 25 Ohm @ 170mA, 10V 2.3V @ 94µA 5.9nC @ 10V 154pF @ 25V 4.5V, 10V ±20V 1.8W (Ta)
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Infineon Technologies MOSFET N-CH 30V 60A 2WDSON 3-WDSON OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete MG-WDSON-2, CanPAK M™ 0 5000 N-Channel - 30V 15A (Ta), 60A (Tc) 5 mOhm @ 20A, 10V 2.2V @ 250µA 42nC @ 10V 3000pF @ 15V 4.5V, 10V ±20V 2.2W (Ta), 28W (Tc)
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Infineon Technologies MOSFET P-CH 30V 1.5A SOT363 6-VSSOP, SC-88, SOT-363 OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PG-SOT363-6 0 9000 P-Channel - 30V 1.5A (Ta) 140 mOhm @ 1.5A, 10V 2V @ 6.3µA 2.9nC @ 10V 294pF @ 15V 4.5V, 10V ±20V 500mW (Ta)
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Infineon Technologies MOSFET N-CH 30V 147A 2WDSON 3-WDSON OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete MG-WDSON-2, CanPAK M™ 0 5000 N-Channel - 30V 32A (Ta), 147A (Tc) 1.7 mOhm @ 30A, 10V 2.2V @ 250µA 102nC @ 10V 7800pF @ 15V 4.5V, 10V ±20V 2.8W (Ta), 57W (Tc)
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Infineon Technologies MOSFET N-CH 25V 170A WDSON-2 3-WDSON OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete MG-WDSON-2, CanPAK M™ 0 5000 N-Channel - 25V 37A (Ta), 170A (Tc) 1.2 mOhm @ 30A, 10V 2V @ 250µA 67nC @ 10V 4900pF @ 12V 4.5V, 10V ±20V 2.8W (Ta), 57W (Tc)
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Infineon Technologies MOSFET N-CH 30V 180A 2WDSON 3-WDSON OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete MG-WDSON-2, CanPAK M™ 0 5000 N-Channel - 30V 39A (Ta), 180A (Tc) 1.2 mOhm @ 30A, 10V 2.2V @ 250µA 169nC @ 10V 16900pF @ 15V 4.5V, 10V ±20V 2.8W (Ta), 89W (Tc)
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