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- Rds On - Drain-Source Resistance :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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12,000
In-stock
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IR / Infineon | MOSFET HEXFET P-CH Low 0.020 Ohm -30V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8 A | 35 mOhms | 40 nC | Enhancement | |||
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2,574
In-stock
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Infineon Technologies | MOSFET DUAL -30V P-CH 20V VGS MAX | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 30 V | - 8 A | 21 mOhms | 52 nC | Enhancement | |||
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2,319
In-stock
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IR / Infineon | MOSFET MOSFT DUAL PCh -30V 8A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | P-Channel | - 30 V | - 8 A | 21 mOhms | 52 nC | ||||||
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120,000
In-stock
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IR / Infineon | MOSFET Dual MOSFT PCh -8.0A 21.0mOhm -4.5V capbl | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | P-Channel | - 30 V | - 8 A | 17 mOhms | 13 nC | ||||||
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2,367
In-stock
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IR / Infineon | MOSFET 1 P-CH -30V HEXFET 20mOhms 40nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 8 A | 20 mOhms | 40 nC | Enhancement | |||
|
GET PRICE |
293
In-stock
|
IR / Infineon | MOSFET DUAL -30V P-CH 20V VGS MAX | 20 V | SMD/SMT | SO-8 | Tube | 2 Channel | Si | P-Channel | - 30 V | - 8 A | 17 mOhms | 13 nC |