- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,475
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET Vdss -30V 25Vgss | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 18 A | 16 mOhms | - 1 V | 16.5 nC | Enhancement | PowerDI | ||
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VIEW | Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 18 A | 0.009 Ohms | - 2.5 V | 50 nC | Enhancement | TrenchFET | |||
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VIEW | Toshiba | MOSFET MOSFET -30V -18A | TSON-Advance-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 18 A | 25 mOhms | |||||||||||
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VIEW | Toshiba | MOSFET N-Ch -30V FET 7420pF -18A 1.9W | SMD/SMT | SOP-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 18 A | 4.2 mOhms | ||||||||||
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VIEW | Toshiba | MOSFET P-Ch -30V FET 27W -18A 1600pF 38nC | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 18 A | 25 mOhms | 38 nC |
