- Manufacture :
- Number of Channels :
- Rds On - Drain-Source Resistance :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
5,908
In-stock
|
IR / Infineon | MOSFET MOSFT PCh -30V -9.2A 19.4mOhm 25Vgs | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9.2 A | 25.6 mOhms | - 1.8 V | 14 nC | Enhancement | |||
|
GET PRICE |
7,499
In-stock
|
IR / Infineon | MOSFET MOSFT P-Ch -30V -9.2A 19.4mOhm | 20 V | SMD/SMT | SO-8 | Reel | Si | P-Channel | - 30 V | - 9.2 A | 32.5 mOhms | 14 nC | ||||||||
|
GET PRICE |
1,708
In-stock
|
Infineon Technologies | MOSFET DUAL -30V P-CH HEXFET 16.3mOhms | 20 V | SMD/SMT | SO-8 | Tube | 2 Channel | Si | P-Channel | - 30 V | - 9.2 A | 13 mOhms | 19 nC | |||||||
|
GET PRICE |
12,000
In-stock
|
IR / Infineon | MOSFET MOSFT DUAL PCh -9.2A 16.3mOhm -4.5V capbl | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | P-Channel | - 30 V | - 9.2 A | 13 mOhms | 19 nC |