MOSFET - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	IRFS4510PBF	1+ $1.760 10+ $1.500 100+ $1.200 500+ $1.050		PDF RFQ	2,216 In-stock	IR / Infineon	MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC	20 V	SMD/SMT	TO-252-3			Tube	1 Channel	Si	N-Channel	100 V	61 A	13.9 mOhms	4 V	54 nC	Enhancement	StrongIRFET
	IRFR4510TRPBF	1+ $1.600 10+ $1.370 100+ $1.050 500+ $0.926 2000+ $0.648		PDF RFQ	6,000 In-stock	Infineon Technologies	MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC		SMD/SMT	TO-252-3			Reel	1 Channel	Si	N-Channel	100 V	63 A	13.9 mOhms	3 V	54 nC	Enhancement	StrongIRFET
	IRFR4510PBF	1+ $1.380 10+ $1.180 100+ $0.907 500+ $0.802		PDF RFQ	63 In-stock	IR / Infineon	MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC	20 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	100 V	63 A	11.1 mOhms	2 V to 4 V	54 nC	Enhancement	StrongIRFET

IRFS4510PBF

IRFS4510PBF

IR / Infineon

MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC

Stock : 2,216

1+: $1.760

10+: $1.500

100+: $1.200

500+: $1.050

IRFR4510TRPBF

IRFR4510TRPBF

Infineon Technologies

MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC

Stock : 6,000

1+: $1.600

10+: $1.370

100+: $1.050

500+: $0.926

2000+: $0.648

IRFR4510PBF

IRFR4510PBF

IR / Infineon

MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC

Stock : 63

1+: $1.380

10+: $1.180

100+: $0.907

500+: $0.802

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