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Packaging :
Rds On - Drain-Source Resistance :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
STF33N60M2
1+
$5.030
10+
$4.280
100+
$3.710
250+
$3.520
RFQ
930
In-stock
STMicroelectronics MOSFET N-CH 600V 0.108Ohm 26A MDmesh M2 25 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 26 A 108 mOhms 3 V 45.5 nC  
STB33N60M2
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RFQ
41,177
In-stock
STMicroelectronics MOSFET POWER MOSFET 25 V SMD/SMT TO-263-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 600 V 26 A 125 mOhms 3 V 45.5 nC Enhancement
STP33N60M2
1+
$5.090
10+
$4.320
100+
$3.750
250+
$3.560
RFQ
480
In-stock
STMicroelectronics MOSFET N-CH 600V 0.108Ohm typ. 26A MDmesh M2 25 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 26 A 108 mOhms 3 V 45.5 nC  
STW33N60M2
1+
$5.540
10+
$4.710
100+
$4.080
250+
$3.870
RFQ
313
In-stock
STMicroelectronics MOSFET N-CH 600V 0.108Ohm typ. 26A MDmesh M2 25 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 26 A 108 mOhms 3 V 45.5 nC  
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