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17 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Tradename | |
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6,492
In-stock
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IXYS | MOSFET HiPERFET Id26 BVdass500 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 230 mOhms | Enhancement | HyperFET | ||||
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276
In-stock
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IXYS | MOSFET 600V 26A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 270 mOhms | Enhancement | HyperFET | ||||
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20
In-stock
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IXYS | MOSFET Polar3 HiPerFET Power MOSFET | Through Hole | TO-220-3 | Tube | Si | N-Channel | 500 V | 26 A | 240 mOhms | HyperFET | |||||||||
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19
In-stock
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IXYS | MOSFET 900V 26A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 26 A | 300 mOhms | Enhancement | HyperFET | ||||
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4
In-stock
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IXYS | MOSFET 600V 26A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 250 mOhms | Enhancement | HyperFET | ||||
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120
In-stock
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IXYS | MOSFET 600V 26A | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 270 mOhms | Enhancement | HyperFET | ||||
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VIEW | IXYS | MOSFET Polar3 HiPerFET Power MOSFET | Through Hole | TO-3P-3 | Tube | Si | N-Channel | 500 V | 26 A | 240 mOhms | HyperFET | |||||||||
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VIEW | IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 240 mOhms | HyperFET | ||||||||
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VIEW | IXYS | MOSFET DIODE Id26 BVdass500 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 200 mOhms | Enhancement | HyperFET | ||||
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VIEW | IXYS | MOSFET 500V 26A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 200 mOhms | Enhancement | HyperFET | ||||
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VIEW | IXYS | MOSFET 28 Amps 600V 0.25 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 250 mOhms | Enhancement | HyperFET | ||||
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VIEW | IXYS | MOSFET 28 Amps 600V 0.25 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 250 mOhms | Enhancement | HyperFET | ||||
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VIEW | IXYS | MOSFET 28 Amps 600V 0.25 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 250 mOhms | Enhancement | HyperFET | ||||
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VIEW | IXYS | MOSFET 26 Amps 500V 0.2 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 200 mOhms | Enhancement | HyperFET | ||||
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VIEW | IXYS | MOSFET 24 Amps 500V 0.2 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 200 mOhms | Enhancement | HyperFET | ||||
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VIEW | IXYS | MOSFET 26 Amps 500V 0.23 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 200 mOhms | Enhancement | HyperFET | ||||
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VIEW | IXYS | MOSFET 26 Amps 550V 0.23 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 26 A | 230 mOhms | Enhancement | HyperFET |