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- Qg - Gate Charge :
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19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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14,172
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 24 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 26 A | 55 mOhms | Enhancement | ||||||
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3,415
In-stock
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Fairchild Semiconductor | MOSFET PT5 100/20V NCH | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 26 A | 33.5 mOhms | PowerTrench | ||||||
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5,727
In-stock
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onsemi | MOSFET NFET SO8FL 60V 26A 24MOHM | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 26 A | 18 mOhms | 2.5 V | 17 nC | |||||
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2,503
In-stock
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STMicroelectronics | MOSFET N-Ch 30V 0.0039 Ohm 26A STripFET VI DG | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 26 A | 4.4 mOhms | |||||||
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25,000
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 26A 40mOhm 22.7nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 26 A | 40 mOhms | 22.7 nC | ||||||||
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1,136
In-stock
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onsemi | MOSFET NFET S08FL 30V 74A 5mOhm | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 26 A | 5 mOhms | Enhancement | ||||||
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818
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 40mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 26 A | 40 mOhms | 22.7 nC | Enhancement | ||||||
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424
In-stock
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Fairchild Semiconductor | MOSFET SINGLE PT8 N 30/20 SYNCFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 26 A | 2 mOhms | 1.7 V | 41 nC | Enhancement | PowerTrench SyncFET | ||||
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19
In-stock
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IXYS | MOSFET 900V 26A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 26 A | 300 mOhms | Enhancement | HyperFET | |||||
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4
In-stock
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IXYS | MOSFET 600V 26A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 250 mOhms | Enhancement | HyperFET | |||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 26 A | 44 mOhms | 2 V | 22 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET DIODE Id26 BVdass500 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 200 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 500V 26A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 200 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 28 Amps 600V 0.25 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 250 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 28 Amps 600V 0.25 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 250 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 28 Amps 600V 0.25 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 250 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 26 Amps 500V 0.2 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 200 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 24 Amps 500V 0.2 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 200 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 26 Amps 500V 0.23 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 200 mOhms | Enhancement | HyperFET |
