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23 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,507
In-stock
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Fairchild Semiconductor | MOSFET 30V 42A 2.5mohms NCh PowerTrench MOSFET | SMD/SMT | Power-56-8 | + 150 C | Reel | Si | N-Channel | 30 V | 26 A | 2.5 mOhms | PowerTrench | |||||||||
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3,415
In-stock
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Fairchild Semiconductor | MOSFET PT5 100/20V NCH | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 26 A | 33.5 mOhms | PowerTrench | ||||||
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5,727
In-stock
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onsemi | MOSFET NFET SO8FL 60V 26A 24MOHM | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 26 A | 18 mOhms | 2.5 V | 17 nC | |||||
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GET PRICE |
41,177
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 26 A | 125 mOhms | 3 V | 45.5 nC | Enhancement | |||
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2,503
In-stock
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STMicroelectronics | MOSFET N-Ch 30V 0.0039 Ohm 26A STripFET VI DG | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 26 A | 4.4 mOhms | |||||||
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886
In-stock
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STMicroelectronics | MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 26 A | 120 mOhms | 4 V | 44 nC | Enhancement | ||||
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2,331
In-stock
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Fairchild Semiconductor | MOSFET NCh150V,26A,42m ohms PowerTrench MOSFET | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 26 A | 33.4 mOhms | PowerTrench | |||||||
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3,000
In-stock
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Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 26 A | 22 mOhms | 1.5 V | 30 nC | Enhancement | ||||
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494
In-stock
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Fairchild Semiconductor | MOSFET N-Ch LL FET Enhancement Mode | 16 V | SMD/SMT | TO-263-3 | - 65 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 26 A | 42 mOhms | Enhancement | ||||||
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1,136
In-stock
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onsemi | MOSFET NFET S08FL 30V 74A 5mOhm | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 26 A | 5 mOhms | Enhancement | ||||||
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424
In-stock
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Fairchild Semiconductor | MOSFET SINGLE PT8 N 30/20 SYNCFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 26 A | 2 mOhms | 1.7 V | 41 nC | Enhancement | PowerTrench SyncFET | ||||
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120
In-stock
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IXYS | MOSFET 600V 26A | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 270 mOhms | Enhancement | HyperFET | |||||
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1,499
In-stock
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onsemi | MOSFET Pwr MOSFET 60V 26A 24mOhm SGL N-CH | SMD/SMT | SO-FL-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 26 A | 24 mOhms | ||||||||||
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VIEW | IXYS | MOSFET 26.0 Amps 600 V 0.27 Ohm Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 270 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 240 mOhms | HyperFET | |||||||||
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5,000
In-stock
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onsemi | MOSFET NFET SO8FL 60V 26A 24MOHM | SMD/SMT | SO-FL-8 | Reel | Si | N-Channel | 60 V | 26 A | 24 mOhms | |||||||||||
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VIEW | IXYS | MOSFET 26 Amps 500V 0.23 Ohm Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 230 mOhms | 5.5 V | 65 nC | Enhancement | PolarHV | |||
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VIEW | onsemi | MOSFET Pwr MOSFET 60V 26A 24mOhm SGL N-CH | SMD/SMT | SO-FL-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 26 A | 24 mOhms | ||||||||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 26 A | 44 mOhms | 2 V | 22 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 28 Amps 600V 0.25 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 250 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 26 Amps 500V 0.2 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 200 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 24 Amps 500V 0.2 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 200 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 26 Amps 500V 0.23 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 200 mOhms | Enhancement | HyperFET |
