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- Qg - Gate Charge :
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8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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14,172
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 24 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 26 A | 55 mOhms | Enhancement | ||||||
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930
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.108Ohm 26A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 108 mOhms | 3 V | 45.5 nC | |||||
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25,000
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 26A 40mOhm 22.7nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 26 A | 40 mOhms | 22.7 nC | ||||||||
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815
In-stock
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Fairchild Semiconductor | MOSFET 400V N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 26 A | 160 mOhms | Enhancement | UniFET | |||||
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480
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.108Ohm typ. 26A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 108 mOhms | 3 V | 45.5 nC | |||||
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441
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 26A 22mOhm 73nC | 30 V | Through Hole | TO-220-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 26 A | 25 mOhms | 73 nC | Enhancement | |||||
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818
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 40mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 26 A | 40 mOhms | 22.7 nC | Enhancement | ||||||
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20
In-stock
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IXYS | MOSFET Polar3 HiPerFET Power MOSFET | Through Hole | TO-220-3 | Tube | Si | N-Channel | 500 V | 26 A | 240 mOhms | HyperFET |
