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Package / Case :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
NTMFS5C426NT1G
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RFQ
1,497
In-stock
onsemi MOSFET T6D3F 40V NFET 20 V SMD/SMT SO-FL-8 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 235 A 1.1 mOhms 2.5 V 65 nC Enhancement  
FDB031N08
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RFQ
1,569
In-stock
Fairchild Semiconductor MOSFET 75V N-Channel PowerTrench 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 75 V 235 A 3.1 mOhms     Enhancement PowerTrench
NVMFS5C612NLT1G
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RFQ
1,550
In-stock
onsemi MOSFET NFET SO8FL 60V 235A 1.5MO 20 V SMD/SMT SO-FL-8 - 55 C + 175 C Reel 1 Channel Si N-Channel 60 V 235 A 1.2 mOhms 1.2 V 91 nC Enhancement  
NVMFS5C426NWFT1G
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RFQ
1,286
In-stock
onsemi MOSFET T6-D3F 40V NFET 20 V SMD/SMT SO-FL-8 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 235 A 1.1 mOhms 2.5 V 65 nC Enhancement  
AUIRF2903ZSTRL
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RFQ
Infineon Technologies MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 30 V 235 A 2.4 mOhms 4 V 160 nC Enhancement  
AUIRF2903ZSTRR
VIEW
RFQ
IR / Infineon MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 30 V 235 A 2.4 mOhms 4 V 160 nC Enhancement  
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