- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Channel Mode :
- Tradename :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,245
In-stock
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Texas instruments | MOSFET 20V PCH NexFET Pwr MOSFET | - 6 V | SMD/SMT | DSBGA-6 | - 40 C | + 85 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 1.6 A | 150 mOhms, 285 mOhms | - 0.8 V | 1.9 nC | NexFET | ||||
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GET PRICE |
47,750
In-stock
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Texas instruments | MOSFET 20V P-CH FemtoFET MOSFET | - 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.6 A | 245 mOhms | - 950 mV | 0.96 nC | Depletion | NexFET | |||
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1,997
In-stock
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Texas instruments | MOSFET P-CH NexFET Pwr MOSFET | - 6 V | SMD/SMT | DSBGA-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.6 A | 47 mOhms | - 850 mV | 2.2 nC | Enhancement | NexFET | |||
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GET PRICE |
1,950
In-stock
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Texas instruments | MOSFET 20V,P-Ch FemtoFET MOSFET | - 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.6 A | 245 mOhms | - 950 mV | 0.96 nC | |||||
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GET PRICE |
36,214
In-stock
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Fairchild Semiconductor | MOSFET SSOT-3 P-CH -20V | 8 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.6 A | 115 mOhms | Enhancement | PowerTrench |