- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Tradename :
- Applied Filters :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
769
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 20.7A D2PAK-2 CoolMOS C3 | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20.7 A | 190 mOhms | Enhancement | CoolMOS | |||||
|
GET PRICE |
11,151
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 20.7A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20.7 A | 190 mOhms | 3 V | 87 nC | CoolMOS | ||||
|
GET PRICE |
2,109
In-stock
|
Vishay Semiconductors | MOSFET 40V 10A 1.56W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 20.7 A | 0.0075 Ohms | 1.5 V | 62 nC | Enhancement | TrenchFET | |||
|
GET PRICE |
531
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 20.7A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20.7 A | 190 mOhms | Enhancement | CoolMOS | |||||
|
GET PRICE |
443
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 20.7A TO247-3 CoolMOS CFD | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20.7 A | 220 mOhms | Enhancement | CoolMOS | |||||
|
GET PRICE |
578
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 20.7A TO220-3 | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20.7 A | 190 mOhms | 4 V | 95 nC | CoolMOS | |||||
|
GET PRICE |
549
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 20.7A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20.7 A | 190 mOhms | Enhancement | CoolMOS | |||||
|
GET PRICE |
402
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 20.7A TO220FP CoolMOS CFD | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20.7 A | 220 mOhms | Enhancement | CoolMOS | |||||
|
GET PRICE |
430
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 20.7A I2PAK-3 | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 20.7 A | 190 mOhms | CoolMOS | ||||||||||
|
GET PRICE |
21,600
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 20.7A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20.7 A | 190 mOhms | Enhancement | CoolMOS | |||||
|
VIEW | Infineon Technologies | MOSFET N-Ch 650V 20.7A TO220-3 CoolMOS CFD | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20.7 A | 220 mOhms | Enhancement | CoolMOS |