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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Tradename | |
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Infineon Technologies | MOSFET N-Ch 650V 20.7A I2PAK-3 | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 20.7 A | 190 mOhms | CoolMOS |
